Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films
Near-stochiometric and carbon-rich a-Si₁₋xCx:H thin films were deposited using the magnetron sputtering of Si target in Ar/CH₄ gas mixture. As-deposited nearstochimetric (x = 0.5) sample showed weak blue photoluminescence (PL), while PL of as-deposited carbon-rich (x = 0.7) sample was 20 times stron...
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| Дата: | 2015 |
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| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120720 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films / A.V. Vasin, Y. Ishikawa, A.V. Rusavsky, A.N. Nazarov, A.A. Konchitz, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 63-70. — Бібліогр.: 48 назв. — англ. |
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irk-123456789-1207202017-06-13T03:03:29Z Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films Vasin, A.V. Ishikawa, Y. Rusavsky, A.V. Nazarov, A.N. Konchitz, A.A. Lysenko, V.S. Near-stochiometric and carbon-rich a-Si₁₋xCx:H thin films were deposited using the magnetron sputtering of Si target in Ar/CH₄ gas mixture. As-deposited nearstochimetric (x = 0.5) sample showed weak blue photoluminescence (PL), while PL of as-deposited carbon-rich (x = 0.7) sample was 20 times stronger and white in color. The films were annealed in pure argon, wet argon, and dry oxygen at 450 °C for 30 min. The intensity of PL in a-Si₁₋xCx:H layers were enhanced by the factor from 2 to 12 after annealing in dependence on the annealing atmosphere. The strongest oxidation and strongest light emission were observed in carbon-rich series (x = 0.7) after annealing in oxidizing atmosphere. Structural properties of the films were characterized by infra-red absorption spectroscopy, ellipsometry and electron paramagnetic resonance. The effect of carbon enrichment of a-Si₁₋xCx:H films and annealing atmosphere on the evolution of photoluminescence and local interatomic bonding structure in annealed material were studied and analyzed. It has been found that main effects of thermal treatments is strong enhancement of photoluminescence accompanied by formation of Si:C–Hn and Si–OxCy bonding. The strongest oxidation effect as well as strongest hotoluminescence were observed in carbon-rich a-SiC:H films. 2015 Article Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films / A.V. Vasin, Y. Ishikawa, A.V. Rusavsky, A.N. Nazarov, A.A. Konchitz, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 63-70. — Бібліогр.: 48 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.01.063 PACS 61.72.uf, 76.30.-v, 77.84.Bw, 78.55.Qr http://dspace.nbuv.gov.ua/handle/123456789/120720 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Near-stochiometric and carbon-rich a-Si₁₋xCx:H thin films were deposited using the magnetron sputtering of Si target in Ar/CH₄ gas mixture. As-deposited nearstochimetric (x = 0.5) sample showed weak blue photoluminescence (PL), while PL of as-deposited carbon-rich (x = 0.7) sample was 20 times stronger and white in color. The films were annealed in pure argon, wet argon, and dry oxygen at 450 °C for 30 min. The intensity of PL in a-Si₁₋xCx:H layers were enhanced by the factor from 2 to 12 after annealing in dependence on the annealing atmosphere. The strongest oxidation and strongest light emission were observed in carbon-rich series (x = 0.7) after annealing in oxidizing atmosphere. Structural properties of the films were characterized by infra-red absorption spectroscopy, ellipsometry and electron paramagnetic resonance. The effect of carbon enrichment of a-Si₁₋xCx:H films and annealing atmosphere on the evolution of photoluminescence and local interatomic bonding structure in annealed material were studied and analyzed. It has been found that main effects of thermal treatments is strong enhancement of photoluminescence accompanied by formation of Si:C–Hn and Si–OxCy bonding. The strongest oxidation effect as well as strongest hotoluminescence were observed in carbon-rich a-SiC:H films. |
| format |
Article |
| author |
Vasin, A.V. Ishikawa, Y. Rusavsky, A.V. Nazarov, A.N. Konchitz, A.A. Lysenko, V.S. |
| spellingShingle |
Vasin, A.V. Ishikawa, Y. Rusavsky, A.V. Nazarov, A.N. Konchitz, A.A. Lysenko, V.S. Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Vasin, A.V. Ishikawa, Y. Rusavsky, A.V. Nazarov, A.N. Konchitz, A.A. Lysenko, V.S. |
| author_sort |
Vasin, A.V. |
| title |
Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films |
| title_short |
Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films |
| title_full |
Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films |
| title_fullStr |
Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films |
| title_full_unstemmed |
Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films |
| title_sort |
photoluminescent properties of oxidized stochiometric and carbon-rich amorphous si₁₋xcx:h films |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2015 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120720 |
| citation_txt |
Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films / A.V. Vasin, Y. Ishikawa, A.V. Rusavsky, A.N. Nazarov, A.A. Konchitz, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 63-70. — Бібліогр.: 48 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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