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Piezoelectric effect in p -Si/SiGe/(001)Si modulation doped heterostructures
We present the results of calculations of the piezoelectric effect in a Si/SiGe multilayer structure with a narrow quantum well and a wide layer of doped Si semiconductor. The proposed theory is a possible explanation of some recent experiments on these structures.
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики конденсованих систем НАН України
2000
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| Series: | Condensed Matter Physics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/120979 |
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