Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for quasiforbidden reflections (200) in the interval of wavelengths near absorption K...
Збережено в:
| Дата: | 2000 |
|---|---|
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121168 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy / V.P. Kladko, L.I. Datsenko, Z.V. Maksimenko, O.S. Lytvyn, I.V. Prokopenko, Z. Zytkiewicz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 343-348. — Бібліогр.: 20 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121168 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1211682017-06-14T03:06:06Z Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy Kladko, V.P. Datsenko, L.I. Maksimenko, Z.V. Lytvyn, O.S. Prokopenko, I.V. Zytkiewicz, Z. Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for quasiforbidden reflections (200) in the interval of wavelengths near absorption K-edges of GaAs components. 2000 Article Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy / V.P. Kladko, L.I. Datsenko, Z.V. Maksimenko, O.S. Lytvyn, I.V. Prokopenko, Z. Zytkiewicz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 343-348. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS: 61.10.E, N; 61.72.D; 68.55.L http://dspace.nbuv.gov.ua/handle/123456789/121168 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for quasiforbidden reflections (200) in the interval of wavelengths near absorption K-edges of GaAs components. |
| format |
Article |
| author |
Kladko, V.P. Datsenko, L.I. Maksimenko, Z.V. Lytvyn, O.S. Prokopenko, I.V. Zytkiewicz, Z. |
| spellingShingle |
Kladko, V.P. Datsenko, L.I. Maksimenko, Z.V. Lytvyn, O.S. Prokopenko, I.V. Zytkiewicz, Z. Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kladko, V.P. Datsenko, L.I. Maksimenko, Z.V. Lytvyn, O.S. Prokopenko, I.V. Zytkiewicz, Z. |
| author_sort |
Kladko, V.P. |
| title |
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy |
| title_short |
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy |
| title_full |
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy |
| title_fullStr |
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy |
| title_full_unstemmed |
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy |
| title_sort |
structural and composition irregularities in gaas:si/gaas films grown by liquid-phase epitaxy |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121168 |
| citation_txt |
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy / V.P. Kladko, L.I. Datsenko, Z.V. Maksimenko, O.S. Lytvyn, I.V. Prokopenko, Z. Zytkiewicz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 343-348. — Бібліогр.: 20 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT kladkovp structuralandcompositionirregularitiesingaassigaasfilmsgrownbyliquidphaseepitaxy AT datsenkoli structuralandcompositionirregularitiesingaassigaasfilmsgrownbyliquidphaseepitaxy AT maksimenkozv structuralandcompositionirregularitiesingaassigaasfilmsgrownbyliquidphaseepitaxy AT lytvynos structuralandcompositionirregularitiesingaassigaasfilmsgrownbyliquidphaseepitaxy AT prokopenkoiv structuralandcompositionirregularitiesingaassigaasfilmsgrownbyliquidphaseepitaxy AT zytkiewiczz structuralandcompositionirregularitiesingaassigaasfilmsgrownbyliquidphaseepitaxy |
| first_indexed |
2023-10-18T20:38:48Z |
| last_indexed |
2023-10-18T20:38:48Z |
| _version_ |
1796150744758353920 |