2025-02-23T09:07:47-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121174%22&qt=morelikethis&rows=5
2025-02-23T09:07:47-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121174%22&qt=morelikethis&rows=5
2025-02-23T09:07:47-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T09:07:47-05:00 DEBUG: Deserialized SOLR response
Comprehensive investigation of defects in highly perfect silicon single crystals
We used X-ray diffraction method of total rocking curves and nondestructive direct observation techniques (atomic force and scanning electron microscopies) to quantitatively determine the defect characteristics (radii and concentrations) for the main types of defects in Czochralski-grown silicon sin...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/121174 |
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