Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures
The work deals with study and optimization of the technological parameters of ohmic contacts for HEMTs. It is shown that the depth of fusion front penetration into semiconductor is the main factor that determines ohmic properties of contact junctions.
Збережено в:
| Дата: | 2002 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121191 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures / R.V. Konakova, V.V. Milenin, M.A. Stovpovoi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 180-182. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121191 |
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| record_format |
dspace |
| spelling |
irk-123456789-1211912017-06-14T03:07:20Z Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures Konakova, R.V. Milenin, V.V. Stovpovoi, M.A. The work deals with study and optimization of the technological parameters of ohmic contacts for HEMTs. It is shown that the depth of fusion front penetration into semiconductor is the main factor that determines ohmic properties of contact junctions. 2002 Article Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures / R.V. Konakova, V.V. Milenin, M.A. Stovpovoi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 180-182. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 73.40.K, 73.40.C http://dspace.nbuv.gov.ua/handle/123456789/121191 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The work deals with study and optimization of the technological parameters of ohmic contacts for HEMTs. It is shown that the depth of fusion front penetration into semiconductor is the main factor that determines ohmic properties of contact junctions. |
| format |
Article |
| author |
Konakova, R.V. Milenin, V.V. Stovpovoi, M.A. |
| spellingShingle |
Konakova, R.V. Milenin, V.V. Stovpovoi, M.A. Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Konakova, R.V. Milenin, V.V. Stovpovoi, M.A. |
| author_sort |
Konakova, R.V. |
| title |
Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures |
| title_short |
Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures |
| title_full |
Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures |
| title_fullStr |
Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures |
| title_full_unstemmed |
Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures |
| title_sort |
optimization of technological parameters of ohmic contact junctions for gaas-algaas-based transistor structures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2002 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121191 |
| citation_txt |
Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures / R.V. Konakova, V.V. Milenin, M.A. Stovpovoi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 180-182. — Бібліогр.: 9 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT konakovarv optimizationoftechnologicalparametersofohmiccontactjunctionsforgaasalgaasbasedtransistorstructures AT mileninvv optimizationoftechnologicalparametersofohmiccontactjunctionsforgaasalgaasbasedtransistorstructures AT stovpovoima optimizationoftechnologicalparametersofohmiccontactjunctionsforgaasalgaasbasedtransistorstructures |
| first_indexed |
2023-10-18T20:38:51Z |
| last_indexed |
2023-10-18T20:38:51Z |
| _version_ |
1796150746565050368 |