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The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation

The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation

The magnetic field dependencies Dr^/r0 = f(H) were investigated for phosphorus-doped n-Si crystals at a temperature of 77.4 K in classical strong magnetic fields up to 200 kOe. We revealed and discuss some distinctions in the field dependencies of magnetoresistance for crystals doped from melt and t...

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Bibliographic Details
Main Authors: Baranskii, P.I., Babich, V.M., Venger, E.F., Dotsenko, Yu.P.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121218
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http://dspace.nbuv.gov.ua/handle/123456789/121218

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