2025-02-23T08:47:13-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121218%22&qt=morelikethis&rows=5
2025-02-23T08:47:13-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121218%22&qt=morelikethis&rows=5
2025-02-23T08:47:13-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T08:47:13-05:00 DEBUG: Deserialized SOLR response
The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation

The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation

The magnetic field dependencies Dr^/r0 = f(H) were investigated for phosphorus-doped n-Si crystals at a temperature of 77.4 K in classical strong magnetic fields up to 200 kOe. We revealed and discuss some distinctions in the field dependencies of magnetoresistance for crystals doped from melt and t...

Full description

Saved in:
Bibliographic Details
Main Authors: Baranskii, P.I., Babich, V.M., Venger, E.F., Dotsenko, Yu.P.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121218
Tags: Add Tag
No Tags, Be the first to tag this record!
id irk-123456789-121218
record_format dspace
spelling irk-123456789-1212182017-06-14T03:06:46Z The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation Baranskii, P.I. Babich, V.M. Venger, E.F. Dotsenko, Yu.P. The magnetic field dependencies Dr^/r0 = f(H) were investigated for phosphorus-doped n-Si crystals at a temperature of 77.4 K in classical strong magnetic fields up to 200 kOe. We revealed and discuss some distinctions in the field dependencies of magnetoresistance for crystals doped from melt and those doped by nuclear transmutation. It is shown that mag-netoresistance ∆ρ⊥/ρ₀ in classical strong magnetic fields is due to the statistically distributed Herring-type defects in the crystals studied. 2000 Article The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation / P.I. Baranskii, V.M. Babich, E.F. Venger, Yu.P. Dotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 449-452. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 61.72.T, 72.20.M http://dspace.nbuv.gov.ua/handle/123456789/121218 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The magnetic field dependencies Dr^/r0 = f(H) were investigated for phosphorus-doped n-Si crystals at a temperature of 77.4 K in classical strong magnetic fields up to 200 kOe. We revealed and discuss some distinctions in the field dependencies of magnetoresistance for crystals doped from melt and those doped by nuclear transmutation. It is shown that mag-netoresistance ∆ρ⊥/ρ₀ in classical strong magnetic fields is due to the statistically distributed Herring-type defects in the crystals studied.
format Article
author Baranskii, P.I.
Babich, V.M.
Venger, E.F.
Dotsenko, Yu.P.
spellingShingle Baranskii, P.I.
Babich, V.M.
Venger, E.F.
Dotsenko, Yu.P.
The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Baranskii, P.I.
Babich, V.M.
Venger, E.F.
Dotsenko, Yu.P.
author_sort Baranskii, P.I.
title The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation
title_short The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation
title_full The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation
title_fullStr The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation
title_full_unstemmed The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation
title_sort features of magnetoresistance of n-si doped with phosphorus from the melt and by nuclear transmutation
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2000
url http://dspace.nbuv.gov.ua/handle/123456789/121218
citation_txt The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation / P.I. Baranskii, V.M. Babich, E.F. Venger, Yu.P. Dotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 449-452. — Бібліогр.: 12 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT baranskiipi thefeaturesofmagnetoresistanceofnsidopedwithphosphorusfromthemeltandbynucleartransmutation
AT babichvm thefeaturesofmagnetoresistanceofnsidopedwithphosphorusfromthemeltandbynucleartransmutation
AT vengeref thefeaturesofmagnetoresistanceofnsidopedwithphosphorusfromthemeltandbynucleartransmutation
AT dotsenkoyup thefeaturesofmagnetoresistanceofnsidopedwithphosphorusfromthemeltandbynucleartransmutation
AT baranskiipi featuresofmagnetoresistanceofnsidopedwithphosphorusfromthemeltandbynucleartransmutation
AT babichvm featuresofmagnetoresistanceofnsidopedwithphosphorusfromthemeltandbynucleartransmutation
AT vengeref featuresofmagnetoresistanceofnsidopedwithphosphorusfromthemeltandbynucleartransmutation
AT dotsenkoyup featuresofmagnetoresistanceofnsidopedwithphosphorusfromthemeltandbynucleartransmutation
first_indexed 2023-10-18T20:38:52Z
last_indexed 2023-10-18T20:38:52Z
_version_ 1796150749420322816

Similar Items