2025-02-23T08:20:48-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121218%22&qt=morelikethis&rows=5
2025-02-23T08:20:48-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121218%22&qt=morelikethis&rows=5
2025-02-23T08:20:48-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T08:20:48-05:00 DEBUG: Deserialized SOLR response
The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation

The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation

The magnetic field dependencies Dr^/r0 = f(H) were investigated for phosphorus-doped n-Si crystals at a temperature of 77.4 K in classical strong magnetic fields up to 200 kOe. We revealed and discuss some distinctions in the field dependencies of magnetoresistance for crystals doped from melt and t...

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Bibliographic Details
Main Authors: Baranskii, P.I., Babich, V.M., Venger, E.F., Dotsenko, Yu.P.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121218
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2025-02-23T08:20:48-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121218%22&qt=morelikethis
2025-02-23T08:20:48-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-121218%22&qt=morelikethis
2025-02-23T08:20:48-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T08:20:48-05:00 DEBUG: Deserialized SOLR response

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