Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix

Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix

Investigated in this paper have been polarization properties of photoluminescence in solid and porous nc-Si−SiOx light emitting structures passivated in HF vapor. These structures were produced by thermal vacuum evaporation of silicon monoxide SiO powder onto polished c-Si substrates. After annealin...

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Бібліографічні деталі
Дата:2015
Автори: Michailovska, K.V., Indutnyi, I.Z., Kudryavtsev, O.O., Sopinskyy, M.V., Shepeliavyi, P.E.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121225
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix / K.V. Michailovska, I.Z. Indutnyi, O.O. Kudryavtsev, M.V. Sopinskyy, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 324-329. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1212252017-06-14T03:06:51Z Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix Michailovska, K.V. Indutnyi, I.Z. Kudryavtsev, O.O. Sopinskyy, M.V. Shepeliavyi, P.E. Investigated in this paper have been polarization properties of photoluminescence in solid and porous nc-Si−SiOx light emitting structures passivated in HF vapor. These structures were produced by thermal vacuum evaporation of silicon monoxide SiO powder onto polished c-Si substrates. After annealing in vacuum for 15 min at the temperature 975 °C, SiOx films were decomposed to SiO₂ with Si nanoclusters embedded in the oxide matrix. Comparison of polarizations, inherent to exciting light and that of film photoluminescence, enabled to find the polarization memory effect in the passivated structures. In anisotropic porous nc-Si−SiOx samples, obtained by oblique deposition in vacuum, there is also well-defined orientation dependence of the PL polarization degree in the sample plane. This dependence is related to the orientation of oxide nanocolumns that form the structure of the porous layer. The above effects are associated with transformation during etching in HF the symmetric Si nanoparticles to asymmetric elongated ones. 2015 Article Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix / K.V. Michailovska, I.Z. Indutnyi, O.O. Kudryavtsev, M.V. Sopinskyy, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 324-329. — Бібліогр.: 17 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.03.324 PACS 78.67.Bf, 78.55.-m, 42.25.Ja http://dspace.nbuv.gov.ua/handle/123456789/121225 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Investigated in this paper have been polarization properties of photoluminescence in solid and porous nc-Si−SiOx light emitting structures passivated in HF vapor. These structures were produced by thermal vacuum evaporation of silicon monoxide SiO powder onto polished c-Si substrates. After annealing in vacuum for 15 min at the temperature 975 °C, SiOx films were decomposed to SiO₂ with Si nanoclusters embedded in the oxide matrix. Comparison of polarizations, inherent to exciting light and that of film photoluminescence, enabled to find the polarization memory effect in the passivated structures. In anisotropic porous nc-Si−SiOx samples, obtained by oblique deposition in vacuum, there is also well-defined orientation dependence of the PL polarization degree in the sample plane. This dependence is related to the orientation of oxide nanocolumns that form the structure of the porous layer. The above effects are associated with transformation during etching in HF the symmetric Si nanoparticles to asymmetric elongated ones.
format Article
author Michailovska, K.V.
Indutnyi, I.Z.
Kudryavtsev, O.O.
Sopinskyy, M.V.
Shepeliavyi, P.E.
spellingShingle Michailovska, K.V.
Indutnyi, I.Z.
Kudryavtsev, O.O.
Sopinskyy, M.V.
Shepeliavyi, P.E.
Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Michailovska, K.V.
Indutnyi, I.Z.
Kudryavtsev, O.O.
Sopinskyy, M.V.
Shepeliavyi, P.E.
author_sort Michailovska, K.V.
title Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix
title_short Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix
title_full Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix
title_fullStr Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix
title_full_unstemmed Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix
title_sort polarization memory of photoluminescence related with si nanoparticles embedded into oxide matrix
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2015
url http://dspace.nbuv.gov.ua/handle/123456789/121225
citation_txt Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix / K.V. Michailovska, I.Z. Indutnyi, O.O. Kudryavtsev, M.V. Sopinskyy, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 324-329. — Бібліогр.: 17 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT michailovskakv polarizationmemoryofphotoluminescencerelatedwithsinanoparticlesembeddedintooxidematrix
AT indutnyiiz polarizationmemoryofphotoluminescencerelatedwithsinanoparticlesembeddedintooxidematrix
AT kudryavtsevoo polarizationmemoryofphotoluminescencerelatedwithsinanoparticlesembeddedintooxidematrix
AT sopinskyymv polarizationmemoryofphotoluminescencerelatedwithsinanoparticlesembeddedintooxidematrix
AT shepeliavyipe polarizationmemoryofphotoluminescencerelatedwithsinanoparticlesembeddedintooxidematrix
first_indexed 2023-10-18T20:38:56Z
last_indexed 2023-10-18T20:38:56Z
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