Characterization of grain boundaries in CdTe polycrystalline films

CdTe polycrystalline films with the average size of grains within the range 10…360 μm were grown on sapphire substrates by using the modified close-spaced sublimation technique. Transverse (across the film) and lateral (along the film’s surface) conductivity as a function of bias voltage and tempera...

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Дата:2015
Автори: Tetyorkin, V.V., Sukach, A.V., Boiko, V.A., Tkachuk, A.I.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121269
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Characterization of grain boundaries in CdTe polycrystalline films / V.V. Tetyorkin, A.V. Sukach, V.A. Boiko, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 428-432. — Бібліогр.: 31 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1212692017-06-14T03:07:55Z Characterization of grain boundaries in CdTe polycrystalline films Tetyorkin, V.V. Sukach, A.V. Boiko, V.A. Tkachuk, A.I. CdTe polycrystalline films with the average size of grains within the range 10…360 μm were grown on sapphire substrates by using the modified close-spaced sublimation technique. Transverse (across the film) and lateral (along the film’s surface) conductivity as a function of bias voltage and temperature were measured using appropriate arrangement of contacts. The transverse conductivity exhibits ohmic behavior, whereas the lateral transport of carriers is dominated by potential barriers at the grain boundaries. The carrier concentration in the grains and the potential barrier height have been estimated. The inhomogeneous distribution of deep defects through the grains was found from the photoluminescence measurements. 2015 Article Characterization of grain boundaries in CdTe polycrystalline films / V.V. Tetyorkin, A.V. Sukach, V.A. Boiko, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 428-432. — Бібліогр.: 31 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.428 PACS 73.40.-c, 73.61.Ga, 78.30.Fs, 78.55.Et http://dspace.nbuv.gov.ua/handle/123456789/121269 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description CdTe polycrystalline films with the average size of grains within the range 10…360 μm were grown on sapphire substrates by using the modified close-spaced sublimation technique. Transverse (across the film) and lateral (along the film’s surface) conductivity as a function of bias voltage and temperature were measured using appropriate arrangement of contacts. The transverse conductivity exhibits ohmic behavior, whereas the lateral transport of carriers is dominated by potential barriers at the grain boundaries. The carrier concentration in the grains and the potential barrier height have been estimated. The inhomogeneous distribution of deep defects through the grains was found from the photoluminescence measurements.
format Article
author Tetyorkin, V.V.
Sukach, A.V.
Boiko, V.A.
Tkachuk, A.I.
spellingShingle Tetyorkin, V.V.
Sukach, A.V.
Boiko, V.A.
Tkachuk, A.I.
Characterization of grain boundaries in CdTe polycrystalline films
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Tetyorkin, V.V.
Sukach, A.V.
Boiko, V.A.
Tkachuk, A.I.
author_sort Tetyorkin, V.V.
title Characterization of grain boundaries in CdTe polycrystalline films
title_short Characterization of grain boundaries in CdTe polycrystalline films
title_full Characterization of grain boundaries in CdTe polycrystalline films
title_fullStr Characterization of grain boundaries in CdTe polycrystalline films
title_full_unstemmed Characterization of grain boundaries in CdTe polycrystalline films
title_sort characterization of grain boundaries in cdte polycrystalline films
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2015
url http://dspace.nbuv.gov.ua/handle/123456789/121269
citation_txt Characterization of grain boundaries in CdTe polycrystalline films / V.V. Tetyorkin, A.V. Sukach, V.A. Boiko, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 428-432. — Бібліогр.: 31 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT sukachav characterizationofgrainboundariesincdtepolycrystallinefilms
AT boikova characterizationofgrainboundariesincdtepolycrystallinefilms
AT tkachukai characterizationofgrainboundariesincdtepolycrystallinefilms
first_indexed 2023-10-18T20:39:02Z
last_indexed 2023-10-18T20:39:02Z
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