External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals
Influence of plastic deformation and high-temperature annealing (T = 2100 °C, t = 1 h) on SiC crystals with grown polytypic junctions demonstrating SF and DL spectra have been presented. SF-i and DL-i type luminescence are inherent to SiC crystals with distortions of the structure related with avail...
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| Дата: | 2015 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121273 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 448-451. — Бібліогр.: 28 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121273 |
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dspace |
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irk-123456789-1212732017-06-14T03:07:36Z External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. Influence of plastic deformation and high-temperature annealing (T = 2100 °C, t = 1 h) on SiC crystals with grown polytypic junctions demonstrating SF and DL spectra have been presented. SF-i and DL-i type luminescence are inherent to SiC crystals with distortions of the structure related with availability of packing defects that lead to onedimensional disordering (along the c-axis). They are a most expressed in doped crystals with original growth defects. DL luminescence appears in pure crystals at plastic deformation and in doped crystals at a hydrostatic pressure. It enhances at the high temperature annealing, too. 2015 Article External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 448-451. — Бібліогр.: 28 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.448 PACS 64.70.K-, 77.84.Bw, 81.30.-t http://dspace.nbuv.gov.ua/handle/123456789/121273 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Influence of plastic deformation and high-temperature annealing (T = 2100 °C, t = 1 h) on SiC crystals with grown polytypic junctions demonstrating SF and DL spectra have been presented. SF-i and DL-i type luminescence are inherent to SiC crystals with distortions of the structure related with availability of packing defects that lead to onedimensional disordering (along the c-axis). They are a most expressed in doped crystals with original growth defects. DL luminescence appears in pure crystals at plastic deformation and in doped crystals at a hydrostatic pressure. It enhances at the high temperature annealing, too. |
| format |
Article |
| author |
Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
| spellingShingle |
Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
| author_sort |
Vlaskina, S.I. |
| title |
External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals |
| title_short |
External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals |
| title_full |
External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals |
| title_fullStr |
External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals |
| title_full_unstemmed |
External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals |
| title_sort |
external impacts on sic nanostructures in pure and lightly doped silicon carbide crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2015 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121273 |
| citation_txt |
External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 448-451. — Бібліогр.: 28 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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