Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs
In the information sciences such as computer science, telecommunications, the treatment of signal or image transmission, the field effect components play an important role. In the frame of our work, we are interested in the study of the gallium arsenide short gate field effect transistor called GaAs...
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| Дата: | 2006 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121429 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs / S. Khemissi, N. Merabtine, M. Zaabat, C. Kenzai, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 34-39. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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dspace |
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irk-123456789-1214292017-06-15T03:03:56Z Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs Khemissi, S. Merabtine, N. Zaabat, M. Kenzai, C. Saidi, Y. Amourache, S. In the information sciences such as computer science, telecommunications, the treatment of signal or image transmission, the field effect components play an important role. In the frame of our work, we are interested in the study of the gallium arsenide short gate field effect transistor called GaAs MESFET. After analytical studying the component static characteristics, according to different operation regimes, a numerical simulation was worked out. The influence of technological dimensions (L, Z, a, and Nd) was studied. The obtained results allow us to determine optimal parameters of the devices from the viewpoint of their applications and specific use. 2006 Article Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs / S. Khemissi, N. Merabtine, M. Zaabat, C. Kenzai, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 34-39. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 85.30.Tv http://dspace.nbuv.gov.ua/handle/123456789/121429 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In the information sciences such as computer science, telecommunications, the treatment of signal or image transmission, the field effect components play an important role. In the frame of our work, we are interested in the study of the gallium arsenide short gate field effect transistor called GaAs MESFET. After analytical studying the component static characteristics, according to different operation regimes, a numerical simulation was worked out. The influence of technological dimensions (L, Z, a, and Nd) was studied. The obtained results allow us to determine optimal parameters of the devices from the viewpoint of their applications and specific use. |
| format |
Article |
| author |
Khemissi, S. Merabtine, N. Zaabat, M. Kenzai, C. Saidi, Y. Amourache, S. |
| spellingShingle |
Khemissi, S. Merabtine, N. Zaabat, M. Kenzai, C. Saidi, Y. Amourache, S. Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Khemissi, S. Merabtine, N. Zaabat, M. Kenzai, C. Saidi, Y. Amourache, S. |
| author_sort |
Khemissi, S. |
| title |
Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs |
| title_short |
Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs |
| title_full |
Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs |
| title_fullStr |
Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs |
| title_full_unstemmed |
Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs |
| title_sort |
influence of physical and geometrical parameters on electrical properties of short gate gaas mesfets |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121429 |
| citation_txt |
Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs / S. Khemissi, N. Merabtine, M. Zaabat, C. Kenzai, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 34-39. — Бібліогр.: 9 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:39:25Z |
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