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Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals

Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals

The current transport through insulating SiO₂ films with silicon nanocrystals in Si/SiO₂(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO₂(Si) films containing the silicon nanoclusters embedded into insulating SiO₂ matrix have been obtained...

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Bibliographic Details
Main Authors: Bratus, O.L., Evtukh, A.A., Steblova, O.V., Prokopchuk, V.M.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121517
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Summary:The current transport through insulating SiO₂ films with silicon nanocrystals in Si/SiO₂(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO₂(Si) films containing the silicon nanoclusters embedded into insulating SiO₂ matrix have been obtained by ion-plasma sputtering of silicon target and subsequent high-temperature annealing. Based on the detailed analysis of current-voltage characteristics, calculation of some electrical parameters has been performed and the mechanism of electron conductivity of nanocomposite SiO₂(Si) films has been ascertained. The electrical conductivity of the films is based on the mechanism of hopping conductivity with variable-range hopping through the traps near the Fermi level.

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