Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity

Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity

The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24·10¹⁴ e/cm²) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence intensity of samples previously loaded with US increased during long-term storage...

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Бібліографічні деталі
Дата:2016
Автори: Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Olikh, Ya.M., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121521
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity / O.V. Konoreva, M.V. Lytovchenko, Ye.V. Malyi, Ya.M. Olikh, I.V. Petrenko, M.B. Pinkovska, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 34-38. — Бібліогр.: 20 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1215212017-06-15T03:04:56Z Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity Konoreva, O.V. Lytovchenko, M.V. Malyi, Ye.V. Olikh, Ya.M. Petrenko, I.V. Pinkovska, M.B. Tartachnyk, V.P. The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24·10¹⁴ e/cm²) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence intensity of samples previously loaded with US increased during long-term storage (t = 15 h). Passing the current through the diode generates the relaxation process of radiation brightness falling followed by the growth when ultrasound is switched on. The results of calculation of the dislocation density responsible for electroluminescence quenching within the region of electroluminescence degradation are adduced. It was found the ultrasound effect on diodes irradiated with high-energy electrons. 2016 Article Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity / O.V. Konoreva, M.V. Lytovchenko, Ye.V. Malyi, Ya.M. Olikh, I.V. Petrenko, M.B. Pinkovska, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 34-38. — Бібліогр.: 20 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.01.034 PACS 29.40.-n, 85.30.-z, 85.60.Dw http://dspace.nbuv.gov.ua/handle/123456789/121521 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24·10¹⁴ e/cm²) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence intensity of samples previously loaded with US increased during long-term storage (t = 15 h). Passing the current through the diode generates the relaxation process of radiation brightness falling followed by the growth when ultrasound is switched on. The results of calculation of the dislocation density responsible for electroluminescence quenching within the region of electroluminescence degradation are adduced. It was found the ultrasound effect on diodes irradiated with high-energy electrons.
format Article
author Konoreva, O.V.
Lytovchenko, M.V.
Malyi, Ye.V.
Olikh, Ya.M.
Petrenko, I.V.
Pinkovska, M.B.
Tartachnyk, V.P.
spellingShingle Konoreva, O.V.
Lytovchenko, M.V.
Malyi, Ye.V.
Olikh, Ya.M.
Petrenko, I.V.
Pinkovska, M.B.
Tartachnyk, V.P.
Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Konoreva, O.V.
Lytovchenko, M.V.
Malyi, Ye.V.
Olikh, Ya.M.
Petrenko, I.V.
Pinkovska, M.B.
Tartachnyk, V.P.
author_sort Konoreva, O.V.
title Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity
title_short Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity
title_full Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity
title_fullStr Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity
title_full_unstemmed Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity
title_sort acoustic-stimulated relaxation of gaas₁₋хpх leds electroluminescence intensity
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2016
url http://dspace.nbuv.gov.ua/handle/123456789/121521
citation_txt Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity / O.V. Konoreva, M.V. Lytovchenko, Ye.V. Malyi, Ya.M. Olikh, I.V. Petrenko, M.B. Pinkovska, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 34-38. — Бібліогр.: 20 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT lytovchenkomv acousticstimulatedrelaxationofgaas1hphledselectroluminescenceintensity
AT malyiyev acousticstimulatedrelaxationofgaas1hphledselectroluminescenceintensity
AT olikhyam acousticstimulatedrelaxationofgaas1hphledselectroluminescenceintensity
AT petrenkoiv acousticstimulatedrelaxationofgaas1hphledselectroluminescenceintensity
AT pinkovskamb acousticstimulatedrelaxationofgaas1hphledselectroluminescenceintensity
AT tartachnykvp acousticstimulatedrelaxationofgaas1hphledselectroluminescenceintensity
first_indexed 2023-10-18T20:39:45Z
last_indexed 2023-10-18T20:39:45Z
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