Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons von Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P., Shlapatska, V.V.

Volltext

Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity von Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Olikh, Ya.M., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P.

Volltext

Low doses effect in GaP light-emitting diodes von Hontaruk, O.M., Konoreva, O.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Radkevych, O.I., Tartachnyk, V.P.

Volltext

Electrophysical characteristics of GaAs₁₋ₓPₓ LEDs irradiated by 2 MeV electrons von Vernydub, R.M., Kyrylenko, O.I., Konoreva, O.V., Olikh, Ya.M., Litovchenko, P.G., Pavlovskyy, Yu.V., Potera, P., Tartachnyk, V.P.

Volltext