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Features of tensoresistance in single crystals of germanium and silicon with different dopants
Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/121522 |
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irk-123456789-1215222017-06-15T03:04:57Z Features of tensoresistance in single crystals of germanium and silicon with different dopants Baranskii, P.I. Gaidar, G.P. Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this paper. 2016 Article Features of tensoresistance in single crystals of germanium and silicon with different dopants / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 39-43. — Бібліогр.: 19 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.01.039 PACS 61.82.Fk http://dspace.nbuv.gov.ua/handle/123456789/121522 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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English |
| description |
Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this paper. |
| format |
Article |
| author |
Baranskii, P.I. Gaidar, G.P. |
| spellingShingle |
Baranskii, P.I. Gaidar, G.P. Features of tensoresistance in single crystals of germanium and silicon with different dopants Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Baranskii, P.I. Gaidar, G.P. |
| author_sort |
Baranskii, P.I. |
| title |
Features of tensoresistance in single crystals of germanium and silicon with different dopants |
| title_short |
Features of tensoresistance in single crystals of germanium and silicon with different dopants |
| title_full |
Features of tensoresistance in single crystals of germanium and silicon with different dopants |
| title_fullStr |
Features of tensoresistance in single crystals of germanium and silicon with different dopants |
| title_full_unstemmed |
Features of tensoresistance in single crystals of germanium and silicon with different dopants |
| title_sort |
features of tensoresistance in single crystals of germanium and silicon with different dopants |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2016 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121522 |
| citation_txt |
Features of tensoresistance in single crystals of germanium and silicon with different dopants / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 39-43. — Бібліогр.: 19 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT baranskiipi featuresoftensoresistanceinsinglecrystalsofgermaniumandsiliconwithdifferentdopants AT gaidargp featuresoftensoresistanceinsinglecrystalsofgermaniumandsiliconwithdifferentdopants |
| first_indexed |
2023-10-18T20:39:45Z |
| last_indexed |
2023-10-18T20:39:45Z |
| _version_ |
1796150785660157952 |