Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations
Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics and behavior were investigated. It has been shown that all DL spectra have the...
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| Дата: | 2016 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121526 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 62-66. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121526 |
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dspace |
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irk-123456789-1215262017-06-15T03:05:41Z Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics and behavior were investigated. It has been shown that all DL spectra have the same logic of construction and demonstrate identical behavior of the thin structure elements. 2016 Article Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 62-66. — Бібліогр.: 14 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.01.062 PACS 64.70.K-, 78.60.Lc, 81.30.-t http://dspace.nbuv.gov.ua/handle/123456789/121526 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics and behavior were investigated. It has been shown that all DL spectra have the same logic of construction and demonstrate identical behavior of the thin structure elements. |
| format |
Article |
| author |
Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
| spellingShingle |
Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
| author_sort |
Vlaskina, S.I. |
| title |
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations |
| title_short |
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations |
| title_full |
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations |
| title_fullStr |
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations |
| title_full_unstemmed |
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations |
| title_sort |
peculiarities of photoluminescence spectra behavior in sic crystals and films during phase transformations |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2016 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121526 |
| citation_txt |
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 62-66. — Бібліогр.: 14 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:39:46Z |
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