p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy
(Ge₂)x(GaAs)₁₋x graded gap layers were grown using the method of liquid phase epitaxy on GaAs substrates. Investigated are distributions of chemical components along the thickness of the epitaxial layer. In accord to the scan patterns obtained in characteristic X-rays, the layers have a perfect stru...
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| Дата: | 2005 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121540 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy / AUTHORS // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 33-34. — Бібліогр.: 2 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1215402017-06-15T03:02:59Z p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy Sapaev, B. Saidov, A.S. Sapaev, I.B. (Ge₂)x(GaAs)₁₋x graded gap layers were grown using the method of liquid phase epitaxy on GaAs substrates. Investigated are distributions of chemical components along the thickness of the epitaxial layer. In accord to the scan patterns obtained in characteristic X-rays, the layers have a perfect structure, and the component distributions both along the thickness and the interface are rather monotonous, macroscopic defects and metal inclusions are absent. In the epitaxial layers, we created p-n junctions by diffusion of Zn from a gas phase. We studied the possibilities of using the GaAs-(Ge₂)x(GaAs)₁−x structures as solar converters including the near infra-red region. In this case, the GaAs substrate serves as a filter for light quanta with the energy hν < EgGaAs. The conversion efficiency dependences on the gradient x and the p-n junction position inside the (Ge₂)x(GaAs)₁−x graded gap layer are also shown. 2005 Article p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy / AUTHORS // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 33-34. — Бібліогр.: 2 назв. — англ. 1560-8034 PACS 68.55.Ac, 81.15.-z http://dspace.nbuv.gov.ua/handle/123456789/121540 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
(Ge₂)x(GaAs)₁₋x graded gap layers were grown using the method of liquid phase epitaxy on GaAs substrates. Investigated are distributions of chemical components along the thickness of the epitaxial layer. In accord to the scan patterns obtained in characteristic X-rays, the layers have a perfect structure, and the component distributions both along the thickness and the interface are rather monotonous, macroscopic defects and metal inclusions are absent. In the epitaxial layers, we created p-n junctions by diffusion of Zn from a gas phase. We studied the possibilities of using the GaAs-(Ge₂)x(GaAs)₁−x structures as solar converters including the near infra-red region. In this case, the GaAs substrate serves as a filter for light quanta with the energy hν < EgGaAs. The conversion efficiency dependences on the gradient x and the p-n junction position inside the (Ge₂)x(GaAs)₁−x graded gap layer are also shown. |
| format |
Article |
| author |
Sapaev, B. Saidov, A.S. Sapaev, I.B. |
| spellingShingle |
Sapaev, B. Saidov, A.S. Sapaev, I.B. p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Sapaev, B. Saidov, A.S. Sapaev, I.B. |
| author_sort |
Sapaev, B. |
| title |
p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy |
| title_short |
p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy |
| title_full |
p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy |
| title_fullStr |
p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy |
| title_full_unstemmed |
p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy |
| title_sort |
p-n junctions obtained in (ge₂)x(gaas)₁₋x varizone solid solutions by liquid phase epitaxy |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2005 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121540 |
| citation_txt |
p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy / AUTHORS // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 33-34. — Бібліогр.: 2 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT sapaevb pnjunctionsobtainedinge2xgaas1xvarizonesolidsolutionsbyliquidphaseepitaxy AT saidovas pnjunctionsobtainedinge2xgaas1xvarizonesolidsolutionsbyliquidphaseepitaxy AT sapaevib pnjunctionsobtainedinge2xgaas1xvarizonesolidsolutionsbyliquidphaseepitaxy |
| first_indexed |
2023-10-18T20:39:31Z |
| last_indexed |
2023-10-18T20:39:31Z |
| _version_ |
1796150771653279744 |