Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films

Effect of hydrogen radiofrequency plasma and chemical treatment on photoluminescence (PL) spectra of SiOx layers containing Si nanoparticles are investigated. Considerable PL intensity growth in the samples containing Si nanocrystals (nc-Si-SiOx) after plasma treatment is observed. The process satur...

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Бібліографічні деталі
Дата:2006
Автори: Indutnyy, I.Z., Lysenko, V.S., Min'ko, V.I., Nazarov, A.N., Tkachenko, A.S., Shepeliavyi, P.E., Dan'ko, V.A., Maidanchuk, I.Yu.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121580
Теги: Додати тег
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films / I.Z. Indutnyy, V.S. Lysenko, I.Yu. Maidanchuk, V.I. Min'ko, A.N. Nazarov, A.S. Tkachenko, P.E. Shepeliavyi, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 9-13. — Бібліогр.: 18 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1215802017-06-15T03:04:36Z Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films Indutnyy, I.Z. Lysenko, V.S. Min'ko, V.I. Nazarov, A.N. Tkachenko, A.S. Shepeliavyi, P.E. Dan'ko, V.A. Maidanchuk, I.Yu. Effect of hydrogen radiofrequency plasma and chemical treatment on photoluminescence (PL) spectra of SiOx layers containing Si nanoparticles are investigated. Considerable PL intensity growth in the samples containing Si nanocrystals (nc-Si-SiOx) after plasma treatment is observed. The process saturates for time of 15 minutes. Chemical treatment in ammonia and acetone vapour before thermal annealing of SiOx layers leads to the considerable changes in PL spectra effecting both on the band shape and on the intensity. The possibility of controlled changes in PL spectra in nc-Si-SiO₂ layers is shown. 2006 Article Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films / I.Z. Indutnyy, V.S. Lysenko, I.Yu. Maidanchuk, V.I. Min'ko, A.N. Nazarov, A.S. Tkachenko, P.E. Shepeliavyi, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 9-13. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 78.66.Jg http://dspace.nbuv.gov.ua/handle/123456789/121580 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Effect of hydrogen radiofrequency plasma and chemical treatment on photoluminescence (PL) spectra of SiOx layers containing Si nanoparticles are investigated. Considerable PL intensity growth in the samples containing Si nanocrystals (nc-Si-SiOx) after plasma treatment is observed. The process saturates for time of 15 minutes. Chemical treatment in ammonia and acetone vapour before thermal annealing of SiOx layers leads to the considerable changes in PL spectra effecting both on the band shape and on the intensity. The possibility of controlled changes in PL spectra in nc-Si-SiO₂ layers is shown.
format Article
author Indutnyy, I.Z.
Lysenko, V.S.
Min'ko, V.I.
Nazarov, A.N.
Tkachenko, A.S.
Shepeliavyi, P.E.
Dan'ko, V.A.
Maidanchuk, I.Yu.
spellingShingle Indutnyy, I.Z.
Lysenko, V.S.
Min'ko, V.I.
Nazarov, A.N.
Tkachenko, A.S.
Shepeliavyi, P.E.
Dan'ko, V.A.
Maidanchuk, I.Yu.
Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Indutnyy, I.Z.
Lysenko, V.S.
Min'ko, V.I.
Nazarov, A.N.
Tkachenko, A.S.
Shepeliavyi, P.E.
Dan'ko, V.A.
Maidanchuk, I.Yu.
author_sort Indutnyy, I.Z.
title Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films
title_short Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films
title_full Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films
title_fullStr Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films
title_full_unstemmed Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films
title_sort effect of chemical and radiofrequency plasma treatment on photoluminescence of siox films
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2006
url http://dspace.nbuv.gov.ua/handle/123456789/121580
citation_txt Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films / I.Z. Indutnyy, V.S. Lysenko, I.Yu. Maidanchuk, V.I. Min'ko, A.N. Nazarov, A.S. Tkachenko, P.E. Shepeliavyi, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 9-13. — Бібліогр.: 18 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:39:34Z
last_indexed 2023-10-18T20:39:34Z
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