Electrical properties of InSb p-n junctions prepared by diffusion methods
InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have b...
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| Дата: | 2016 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121603 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electrical properties of InSb p-n junctions prepared by diffusion methods / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 295-298. — Бібліогр.: 20 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121603 |
|---|---|
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dspace |
| spelling |
irk-123456789-1216032017-06-15T03:04:20Z Electrical properties of InSb p-n junctions prepared by diffusion methods Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have been obtained for the junctions prepared using the two-stage diffusion process. 2016 Article Electrical properties of InSb p-n junctions prepared by diffusion methods / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 295-298. — Бібліогр.: 20 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.03.295 PACS 73.40.Gk, 73.40.Kp http://dspace.nbuv.gov.ua/handle/123456789/121603 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have been obtained for the junctions prepared using the two-stage diffusion process. |
| format |
Article |
| author |
Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| spellingShingle |
Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. Electrical properties of InSb p-n junctions prepared by diffusion methods Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| author_sort |
Sukach, A.V. |
| title |
Electrical properties of InSb p-n junctions prepared by diffusion methods |
| title_short |
Electrical properties of InSb p-n junctions prepared by diffusion methods |
| title_full |
Electrical properties of InSb p-n junctions prepared by diffusion methods |
| title_fullStr |
Electrical properties of InSb p-n junctions prepared by diffusion methods |
| title_full_unstemmed |
Electrical properties of InSb p-n junctions prepared by diffusion methods |
| title_sort |
electrical properties of insb p-n junctions prepared by diffusion methods |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2016 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121603 |
| citation_txt |
Electrical properties of InSb p-n junctions prepared by diffusion methods / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 295-298. — Бібліогр.: 20 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT sukachav electricalpropertiesofinsbpnjunctionspreparedbydiffusionmethods AT tetyorkinvv electricalpropertiesofinsbpnjunctionspreparedbydiffusionmethods AT tkachukai electricalpropertiesofinsbpnjunctionspreparedbydiffusionmethods |
| first_indexed |
2023-10-18T20:39:52Z |
| last_indexed |
2023-10-18T20:39:52Z |
| _version_ |
1796150789786304512 |