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The influence of surface defects on the pinhole formation in silicide thin film

The influence of surface defects on the pinhole formation in silicide thin film

The growth of the CoSi layer was considered within the framework of the grain boundary diffusion model. The time dependences of the temperature due to the exothermic reaction of silicide formation as well as the dependences of the CoSi layer thickness were calculated for various values of the reacti...

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Bibliographic Details
Main Authors: Belousov, I.V., Grib, A.N., Kuznetsov, G.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121615
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http://dspace.nbuv.gov.ua/handle/123456789/121615

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