Ultra-high field transport in GaN-based heterostructures

Ultra-high field transport in GaN-based heterostructures

This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns was used. The experimental results indicate that overheating of the 2DEG does n...

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Дата:2006
Автори: Vitusevich, S.A., Danylyuk, S.V., Danilchenko, B.A., Klein, N., Zelenskyi, S.E., Drok, E., Avksentyev, A.Yu., Sokolov, V.N., Kochelap, V.A., Belyaev, A.E., Petrychuk, M.V., Luth, H.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121621
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Ultra-high field transport in GaN-based heterostructures / S.A. Vitusevich, S.V. Danylyuk, B.A. Danilchenko, N. Klein, S.E. Zelenskyi, E. Drok, A.Yu. Avksentyev, V.N. Sokolov, V.A. Kochelap, A.E. Belyaev, M.V. Petrychuk, H. Luth // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 66-69. — Бібліогр.: 8 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-121621
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spelling irk-123456789-1216212017-06-16T03:03:57Z Ultra-high field transport in GaN-based heterostructures Vitusevich, S.A. Danylyuk, S.V. Danilchenko, B.A. Klein, N. Zelenskyi, S.E. Drok, E. Avksentyev, A.Yu. Sokolov, V.N. Kochelap, V.A. Belyaev, A.E. Petrychuk, M.V. Luth, H. This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns was used. The experimental results indicate that overheating of the 2DEG does not exceed 1000 K in this electric field range and drift velocity as high as ~10⁷ cm/s was obtained. Additionally, the low frequency 1/f noise spectra measured for a different bias voltage are analyzed with respect to field-induced contribution of hopping conductivity in AlGaN barrier region. 2006 Article Ultra-high field transport in GaN-based heterostructures / S.A. Vitusevich, S.V. Danylyuk, B.A. Danilchenko, N. Klein, S.E. Zelenskyi, E. Drok, A.Yu. Avksentyev, V.N. Sokolov, V.A. Kochelap, A.E. Belyaev, M.V. Petrychuk, H. Luth // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 66-69. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 72.20.Ht, 72.80.Ey, 73.40.-c http://dspace.nbuv.gov.ua/handle/123456789/121621 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns was used. The experimental results indicate that overheating of the 2DEG does not exceed 1000 K in this electric field range and drift velocity as high as ~10⁷ cm/s was obtained. Additionally, the low frequency 1/f noise spectra measured for a different bias voltage are analyzed with respect to field-induced contribution of hopping conductivity in AlGaN barrier region.
format Article
author Vitusevich, S.A.
Danylyuk, S.V.
Danilchenko, B.A.
Klein, N.
Zelenskyi, S.E.
Drok, E.
Avksentyev, A.Yu.
Sokolov, V.N.
Kochelap, V.A.
Belyaev, A.E.
Petrychuk, M.V.
Luth, H.
spellingShingle Vitusevich, S.A.
Danylyuk, S.V.
Danilchenko, B.A.
Klein, N.
Zelenskyi, S.E.
Drok, E.
Avksentyev, A.Yu.
Sokolov, V.N.
Kochelap, V.A.
Belyaev, A.E.
Petrychuk, M.V.
Luth, H.
Ultra-high field transport in GaN-based heterostructures
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Vitusevich, S.A.
Danylyuk, S.V.
Danilchenko, B.A.
Klein, N.
Zelenskyi, S.E.
Drok, E.
Avksentyev, A.Yu.
Sokolov, V.N.
Kochelap, V.A.
Belyaev, A.E.
Petrychuk, M.V.
Luth, H.
author_sort Vitusevich, S.A.
title Ultra-high field transport in GaN-based heterostructures
title_short Ultra-high field transport in GaN-based heterostructures
title_full Ultra-high field transport in GaN-based heterostructures
title_fullStr Ultra-high field transport in GaN-based heterostructures
title_full_unstemmed Ultra-high field transport in GaN-based heterostructures
title_sort ultra-high field transport in gan-based heterostructures
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2006
url http://dspace.nbuv.gov.ua/handle/123456789/121621
citation_txt Ultra-high field transport in GaN-based heterostructures / S.A. Vitusevich, S.V. Danylyuk, B.A. Danilchenko, N. Klein, S.E. Zelenskyi, E. Drok, A.Yu. Avksentyev, V.N. Sokolov, V.A. Kochelap, A.E. Belyaev, M.V. Petrychuk, H. Luth // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 66-69. — Бібліогр.: 8 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT danylyuksv ultrahighfieldtransportinganbasedheterostructures
AT danilchenkoba ultrahighfieldtransportinganbasedheterostructures
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AT avksentyevayu ultrahighfieldtransportinganbasedheterostructures
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first_indexed 2023-10-18T20:39:54Z
last_indexed 2023-10-18T20:39:54Z
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