Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication
Electrophysical parameters of Hg₁₋xCdxTe thin films grown by liquid-phase epitaxy and molecular-beam epitaxy were investigated before and after the high-frequency sonication ( fUS = 7.5 MHz, WUS ~ 10⁴ W/m²). It was determined that parameters of MBE-grown Hg₁₋xCdxTe thin films are stable to ultrasoun...
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| Дата: | 2006 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121630 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication / R.K. Savkina, F.F. Sizov, A.B. Smirnov, V.V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 31-35. — Бібліогр.: 20 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121630 |
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dspace |
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irk-123456789-1216302017-06-16T03:03:56Z Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication Savkina, R.K. Sizov, F.F. Smirnov, A.B. Tetyorkin, V.V. Electrophysical parameters of Hg₁₋xCdxTe thin films grown by liquid-phase epitaxy and molecular-beam epitaxy were investigated before and after the high-frequency sonication ( fUS = 7.5 MHz, WUS ~ 10⁴ W/m²). It was determined that parameters of MBE-grown Hg₁₋xCdxTe thin films are stable to ultrasound effect, while for thin films grown by LPE the sonically stimulated change of the conductivity type was observed. The best agreement between experiment and calculation was obtained in the frame of the assumption about forming of the thin layer with another conductivity type. The possible nature of the observed effect was analyzed. 2006 Article Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication / R.K. Savkina, F.F. Sizov, A.B. Smirnov, V.V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 31-35. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS 43.35.+d, 73.61.Ga, 73.50.Jt http://dspace.nbuv.gov.ua/handle/123456789/121630 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Electrophysical parameters of Hg₁₋xCdxTe thin films grown by liquid-phase epitaxy and molecular-beam epitaxy were investigated before and after the high-frequency sonication ( fUS = 7.5 MHz, WUS ~ 10⁴ W/m²). It was determined that parameters of MBE-grown Hg₁₋xCdxTe thin films are stable to ultrasound effect, while for thin films grown by LPE the sonically stimulated change of the conductivity type was observed. The best agreement between experiment and calculation was obtained in the frame of the assumption about forming of the thin layer with another conductivity type. The possible nature of the observed effect was analyzed. |
| format |
Article |
| author |
Savkina, R.K. Sizov, F.F. Smirnov, A.B. Tetyorkin, V.V. |
| spellingShingle |
Savkina, R.K. Sizov, F.F. Smirnov, A.B. Tetyorkin, V.V. Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Savkina, R.K. Sizov, F.F. Smirnov, A.B. Tetyorkin, V.V. |
| author_sort |
Savkina, R.K. |
| title |
Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication |
| title_short |
Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication |
| title_full |
Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication |
| title_fullStr |
Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication |
| title_full_unstemmed |
Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication |
| title_sort |
layer structure formation in hg₁₋xcdxte films after high-frequency sonication |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121630 |
| citation_txt |
Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication / R.K. Savkina, F.F. Sizov, A.B. Smirnov, V.V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 31-35. — Бібліогр.: 20 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:39:55Z |
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