Obtaining silicon carbide via chemical vapor, plasma-chemical and sublimation methods

• Main Authors: Zhuravlov, А.Yu., Hovanskiy, N.А., Khizhnyak, D.A., Shirokov, B.M., Semenov, N.A., Shijan, А.V., Strigunovskiy, S.V., Yevsiukov, A.I., Shevtsov, A.B., Nazarenko, E.A., Pilipenko, N.N.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2017
• Series: Вопросы атомной науки и техники
• Subjects: Низкотемпературная плазма и плазменные технологии
• Online Access: http://dspace.nbuv.gov.ua/handle/123456789/122172

In the present paper the results of studies on obtaining silicon carbide via chemical gas phase, plasma-chemical and sublimation methods are described. The thermodynamic analysis of chemical reactions of silicon carbide in the presence of hydrogen and without was provided. Was found that, without free hydrogen reaction of silicon carbide formation can’t proceed. Established depending on ratio between the various active components of the gas phase SiCl₄:C₇H₈, entering the reactor, morphology of SiC layer. Was shown that, with increasing temperature of the substrate deposition rate increases, reaching a maximum temperature about ~ 1800 K with a steep decreasing at higher temperatures ranges, which is typical of a homogeneous reaction. From source (NbTa)SiC, received via chemical CVD, obtained films of SiC with sublimation method.