Intrinsically shunted Josephson junctions for electronics applications
Conventional Josephson metal-insulator-metal devices are inherently underdamped and exhibit hysteretic current -voltage response due to a very high subgap resistance compared to that in the normal state. At the same time, overdamped junctions with single-valued characteristics are needed for most su...
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| Дата: | 2017 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2017
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| Назва видання: | Физика низких температур |
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| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/129526 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Intrinsically shunted Josephson junctions for electronics applications / M. Belogolovskii, E. Zhitlukhina, V. Lacquaniti, N. De Leo, M. Fretto, A. Sosso // Физика низких температур. — 2017. — Т. 43, № 7. — С. 950-961. — Бібліогр.: 75 назв. — англ. |
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irk-123456789-1295262018-01-20T03:05:00Z Intrinsically shunted Josephson junctions for electronics applications Belogolovskii, M. Zhitlukhina, E. Lacquaniti, V. De Leo, N. Fretto, M. Sosso, A. Сверхпроводящие и мезоскопические структуры. К 70-летию со дня рождения А.Н. Омельянчука Conventional Josephson metal-insulator-metal devices are inherently underdamped and exhibit hysteretic current -voltage response due to a very high subgap resistance compared to that in the normal state. At the same time, overdamped junctions with single-valued characteristics are needed for most superconducting digital applications. The usual way to overcome the hysteretic behavior is to place an external low-resistance normal-metal shunt in parallel with each junction. Unfortunately, such solution results in a considerable complication of the circuitry design and introduces parasitic inductance through the junction. This paper provides a concise overview of some generic approaches that have been proposed in order to realize internal shunting in Josephson heterostructures with a barrier that itself contains the desired resistive component. The main attention is paid to self-shunted devices with local weak-link transmission probabilities that are so strongly disordered in the interface plane that transmission probabilities are tiny for the main part of the transition region between two super-conducting electrodes, while a small part of the interface is well transparent. We discuss the possibility of realizing a universal bimodal distribution function and emphasize advantages of such junctions that can be considered as a new class of self-shunted Josephson devices promising for practical applications in superconducting electronics operating at 4.2 K. 2017 Article Intrinsically shunted Josephson junctions for electronics applications / M. Belogolovskii, E. Zhitlukhina, V. Lacquaniti, N. De Leo, M. Fretto, A. Sosso // Физика низких температур. — 2017. — Т. 43, № 7. — С. 950-961. — Бібліогр.: 75 назв. — англ. 0132-6414 PACS: 85.25.Cp, 73.23.–b, 68.55.aj http://dspace.nbuv.gov.ua/handle/123456789/129526 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Сверхпроводящие и мезоскопические структуры. К 70-летию со дня рождения А.Н. Омельянчука Сверхпроводящие и мезоскопические структуры. К 70-летию со дня рождения А.Н. Омельянчука |
| spellingShingle |
Сверхпроводящие и мезоскопические структуры. К 70-летию со дня рождения А.Н. Омельянчука Сверхпроводящие и мезоскопические структуры. К 70-летию со дня рождения А.Н. Омельянчука Belogolovskii, M. Zhitlukhina, E. Lacquaniti, V. De Leo, N. Fretto, M. Sosso, A. Intrinsically shunted Josephson junctions for electronics applications Физика низких температур |
| description |
Conventional Josephson metal-insulator-metal devices are inherently underdamped and exhibit hysteretic current -voltage response due to a very high subgap resistance compared to that in the normal state. At the same time, overdamped junctions with single-valued characteristics are needed for most superconducting digital applications. The usual way to overcome the hysteretic behavior is to place an external low-resistance normal-metal shunt in parallel with each junction. Unfortunately, such solution results in a considerable complication of the circuitry design and introduces parasitic inductance through the junction. This paper provides a concise overview of some generic approaches that have been proposed in order to realize internal shunting in Josephson heterostructures with a barrier that itself contains the desired resistive component. The main attention is paid to self-shunted devices with local weak-link transmission probabilities that are so strongly disordered in the interface plane that transmission probabilities are tiny for the main part of the transition region between two super-conducting electrodes, while a small part of the interface is well transparent. We discuss the possibility of realizing a universal bimodal distribution function and emphasize advantages of such junctions that can be considered as a new class of self-shunted Josephson devices promising for practical applications in superconducting electronics operating at 4.2 K. |
| format |
Article |
| author |
Belogolovskii, M. Zhitlukhina, E. Lacquaniti, V. De Leo, N. Fretto, M. Sosso, A. |
| author_facet |
Belogolovskii, M. Zhitlukhina, E. Lacquaniti, V. De Leo, N. Fretto, M. Sosso, A. |
| author_sort |
Belogolovskii, M. |
| title |
Intrinsically shunted Josephson junctions for electronics applications |
| title_short |
Intrinsically shunted Josephson junctions for electronics applications |
| title_full |
Intrinsically shunted Josephson junctions for electronics applications |
| title_fullStr |
Intrinsically shunted Josephson junctions for electronics applications |
| title_full_unstemmed |
Intrinsically shunted Josephson junctions for electronics applications |
| title_sort |
intrinsically shunted josephson junctions for electronics applications |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
2017 |
| topic_facet |
Сверхпроводящие и мезоскопические структуры. К 70-летию со дня рождения А.Н. Омельянчука |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/129526 |
| citation_txt |
Intrinsically shunted Josephson junctions for electronics applications / M. Belogolovskii, E. Zhitlukhina, V. Lacquaniti, N. De Leo, M. Fretto, A. Sosso // Физика низких температур. — 2017. — Т. 43, № 7. — С. 950-961. — Бібліогр.: 75 назв. — англ. |
| series |
Физика низких температур |
| work_keys_str_mv |
AT belogolovskiim intrinsicallyshuntedjosephsonjunctionsforelectronicsapplications AT zhitlukhinae intrinsicallyshuntedjosephsonjunctionsforelectronicsapplications AT lacquanitiv intrinsicallyshuntedjosephsonjunctionsforelectronicsapplications AT deleon intrinsicallyshuntedjosephsonjunctionsforelectronicsapplications AT frettom intrinsicallyshuntedjosephsonjunctionsforelectronicsapplications AT sossoa intrinsicallyshuntedjosephsonjunctionsforelectronicsapplications |
| first_indexed |
2023-10-18T20:58:02Z |
| last_indexed |
2023-10-18T20:58:02Z |
| _version_ |
1796151576186847232 |