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Simulation of growth of graded bandgap GaAsP layers at liquid phase electroepitaxy

Simulation of growth of graded bandgap GaAsP layers at liquid phase electroepitaxy

The composition control possibility of the GaAs₁₋ₓPₓ solid solution on GaAs substrate at liquid phase electroepitaxy from the Ga-As-P solution-melt is theoretically considered. It has been established that under steady-state conditions specifying the process parameters such as temperature and/or the...

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Bibliographic Details
Main Authors: Tsybulenko, V., Baganov, Ye., Krasnov, V., Shutov, S.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2008
Series:Functional Materials
Subjects:
Modeling and simulation
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/135360
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http://dspace.nbuv.gov.ua/handle/123456789/135360

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