2025-02-22T17:05:27-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-135592%22&qt=morelikethis&rows=5

2025-02-22T17:05:27-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-135592%22&qt=morelikethis&rows=5

2025-02-22T17:05:27-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK

2025-02-22T17:05:27-05:00 DEBUG: Deserialized SOLR response

Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon

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Bibliographic Details
Main Authors:	Zaitsev, R.V., Kopach, V.R., Kirichenko, M.V., Doroshenko, A.N., Khrypunov, G.S.
Format:	Article
Language:	English
Published:	НТК «Інститут монокристалів» НАН України 2011
Series:	Functional Materials
Subjects:	Modeling and simulation
Online Access:	http://dspace.nbuv.gov.ua/handle/123456789/135592
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Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon

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