Infrared spectroscopy and electroreflectance in the region of fundamental optical transition E₀ of heavily doped n-GaAs (100)

• Дата: 2009
• Автори: Gentsar, P.O., Vlasenko, O.I., Vuichyk, M.V., Stronski, O.V.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2009
• Назва видання: Functional Materials
• Теми: Characterization and properties
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/136623
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Infrared spectroscopy and electroreflectance in the region of fundamental optical transition E₀ of heavily doped n-GaAs (100) // P.O. Gentsar, O.I. Vlasenko, M.V. Vuichyk, O.V. Stronski // Functional Materials. — 2009. — Т. 16, № 1. — С. 23-28. — Бібліогр.: 9 назв. — англ.

Studied were the reflection spectra of dynamically chemically etched n-GaAs (100) single crystals with electron concentration of 10¹⁸ to 5·10¹⁸ cm⁻³ in the 1.4-25 μm range as well as the electroreflection ones in 1.3-1.6 eV range using electrolytic method. The values of physical parameters and parameters in the space charge region of subsurface layer of the investigated material have been obtained: electron concentration N, plasma frequency ωp, relaxation time of free carriers over the pulse τp, energies of optical transitions E₀(Г₈ᵥ-Г₆c), electrooptical energy hθ, surface electric field Fs, phenomenological broadening parameter Г, energy relaxation time τ, the wave function oscillation durability of quantum-mechanical particle λᴋғ with the reduced effective mass μ at a given surface electric field Fs. The energy diagram of the chemico-dynamically etched n-GaAs (100) surface has been found to include an extreme. The presence of such extreme is explained by zero value of the electron wave function on the surface and/or the structure gettering of the free carriers.