Excitonic photoconductivity of heterostructures based on gallium and indium selenides
Present spectra of photosensitivity of various types of heterojunctions based on layered crystals A³B⁶ made of the Van der Waals connection of pairs on heteromer as well as covalent. We also discuss the features of excitonic bands of the crystals. Examples of the first type, the heterojunction are p...
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| Дата: | 2017 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
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НТК «Інститут монокристалів» НАН України
2017
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| Назва видання: | Functional Materials |
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| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/136716 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Excitonic photoconductivity of heterostructures based on gallium and indium selenides / V.M. Katerynchuk, Z.D. Kovalyuk, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 2. — С. 203-205. — Бібліогр.: 9 назв. — англ. |
Репозитарії
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irk-123456789-1367162018-06-17T03:13:45Z Excitonic photoconductivity of heterostructures based on gallium and indium selenides Katerynchuk, V.M. Kovalyuk, Z.D. Tkachuk, I.G. Characterization and properties Present spectra of photosensitivity of various types of heterojunctions based on layered crystals A³B⁶ made of the Van der Waals connection of pairs on heteromer as well as covalent. We also discuss the features of excitonic bands of the crystals. Examples of the first type, the heterojunction are pairs of n-InSe-p-InSe and p-GaSe-n-InSe and p-GaSe-n-In₄Se₃, n-SnS₂-p-InSe. As examples of heterojunction with a the covalent bond are the other systems: In₂O₃-InSe, In₂O₃-Ga₂O₃-GaSe, In₂O₃-Ga₂O₃-GaTe. These heterojunctions formed with participation of their oxides of different chemical nature. In the case when the oxide has leading properties, it plays a direct active role in the heterojunction formation. However, the formation of the heterojunction using high temperature heating of the substrates at air, naturally leads to uncontrolled growth of its own oxides on p-GaSe and p-GaTe which shows dielectric properties. 2017 Article Excitonic photoconductivity of heterostructures based on gallium and indium selenides / V.M. Katerynchuk, Z.D. Kovalyuk, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 2. — С. 203-205. — Бібліогр.: 9 назв. — англ. 1027-5495 DOI: https://doi.org/10.15407/fm24.02.203 http://dspace.nbuv.gov.ua/handle/123456789/136716 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Characterization and properties Characterization and properties |
| spellingShingle |
Characterization and properties Characterization and properties Katerynchuk, V.M. Kovalyuk, Z.D. Tkachuk, I.G. Excitonic photoconductivity of heterostructures based on gallium and indium selenides Functional Materials |
| description |
Present spectra of photosensitivity of various types of heterojunctions based on layered crystals A³B⁶ made of the Van der Waals connection of pairs on heteromer as well as covalent. We also discuss the features of excitonic bands of the crystals. Examples of the first type, the heterojunction are pairs of n-InSe-p-InSe and p-GaSe-n-InSe and p-GaSe-n-In₄Se₃, n-SnS₂-p-InSe. As examples of heterojunction with a the covalent bond are the other systems: In₂O₃-InSe, In₂O₃-Ga₂O₃-GaSe, In₂O₃-Ga₂O₃-GaTe. These heterojunctions formed with participation of their oxides of different chemical nature. In the case when the oxide has leading properties, it plays a direct active role in the heterojunction formation. However, the formation of the heterojunction using high temperature heating of the substrates at air, naturally leads to uncontrolled growth of its own oxides on p-GaSe and p-GaTe which shows dielectric properties. |
| format |
Article |
| author |
Katerynchuk, V.M. Kovalyuk, Z.D. Tkachuk, I.G. |
| author_facet |
Katerynchuk, V.M. Kovalyuk, Z.D. Tkachuk, I.G. |
| author_sort |
Katerynchuk, V.M. |
| title |
Excitonic photoconductivity of heterostructures based on gallium and indium selenides |
| title_short |
Excitonic photoconductivity of heterostructures based on gallium and indium selenides |
| title_full |
Excitonic photoconductivity of heterostructures based on gallium and indium selenides |
| title_fullStr |
Excitonic photoconductivity of heterostructures based on gallium and indium selenides |
| title_full_unstemmed |
Excitonic photoconductivity of heterostructures based on gallium and indium selenides |
| title_sort |
excitonic photoconductivity of heterostructures based on gallium and indium selenides |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2017 |
| topic_facet |
Characterization and properties |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/136716 |
| citation_txt |
Excitonic photoconductivity of heterostructures based on gallium and indium selenides / V.M. Katerynchuk, Z.D. Kovalyuk, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 2. — С. 203-205. — Бібліогр.: 9 назв. — англ. |
| series |
Functional Materials |
| work_keys_str_mv |
AT katerynchukvm excitonicphotoconductivityofheterostructuresbasedongalliumandindiumselenides AT kovalyukzd excitonicphotoconductivityofheterostructuresbasedongalliumandindiumselenides AT tkachukig excitonicphotoconductivityofheterostructuresbasedongalliumandindiumselenides |
| first_indexed |
2023-10-18T21:14:00Z |
| last_indexed |
2023-10-18T21:14:00Z |
| _version_ |
1796152269060702208 |