Chemical polishing of InAs, InSb, GaAs and GaSb
The mechanism and kinetics of chemical dissolution of InAs, InSb, GaAs and GaSb in (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching mixtures have been studied. Influence of tartaric acid on the parameters of chemical-dynamic polishing and morphology of the obtained crystals surface has been determined. Using of (NH₄)...
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| Дата: | 2017 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2017
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/136890 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Chemical polishing of InAs, InSb, GaAs and GaSb / I.V. Levchenko, V.M. Tomashyk, I.B. Stratiychuk, G.P. Malanych, A.S. Stanetska, A.A. Korchovyi // Functional Materials. — 2017. — Т. 24, № 4. — С. 654-659. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-136890 |
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dspace |
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irk-123456789-1368902018-06-17T03:11:26Z Chemical polishing of InAs, InSb, GaAs and GaSb Levchenko, I.V. Tomashyk, V.M. Stratiychuk, I.B. Malanych, G.P. Stanetska, A.S. Korchovyi, A.A. Technology The mechanism and kinetics of chemical dissolution of InAs, InSb, GaAs and GaSb in (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching mixtures have been studied. Influence of tartaric acid on the parameters of chemical-dynamic polishing and morphology of the obtained crystals surface has been determined. Using of (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching solutions provides the controlled removal of thin layers and the polishing of investigated semiconductors. The polishing etchant compositions have been proposed and conditions for the chemical-dynamic polishing of the InAs, InSb, GaAs and GaSb crystals have been optimized. 2017 Article Chemical polishing of InAs, InSb, GaAs and GaSb / I.V. Levchenko, V.M. Tomashyk, I.B. Stratiychuk, G.P. Malanych, A.S. Stanetska, A.A. Korchovyi // Functional Materials. — 2017. — Т. 24, № 4. — С. 654-659. — Бібліогр.: 12 назв. — англ. 1027-5495 DOI: https://doi.org/10.15407/fm24.04.654 http://dspace.nbuv.gov.ua/handle/123456789/136890 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Technology Technology |
| spellingShingle |
Technology Technology Levchenko, I.V. Tomashyk, V.M. Stratiychuk, I.B. Malanych, G.P. Stanetska, A.S. Korchovyi, A.A. Chemical polishing of InAs, InSb, GaAs and GaSb Functional Materials |
| description |
The mechanism and kinetics of chemical dissolution of InAs, InSb, GaAs and GaSb in (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching mixtures have been studied. Influence of tartaric acid on the parameters of chemical-dynamic polishing and morphology of the obtained crystals surface has been determined. Using of (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching solutions provides the controlled removal of thin layers and the polishing of investigated semiconductors. The polishing etchant compositions have been proposed and conditions for the chemical-dynamic polishing of the InAs, InSb, GaAs and GaSb crystals have been optimized. |
| format |
Article |
| author |
Levchenko, I.V. Tomashyk, V.M. Stratiychuk, I.B. Malanych, G.P. Stanetska, A.S. Korchovyi, A.A. |
| author_facet |
Levchenko, I.V. Tomashyk, V.M. Stratiychuk, I.B. Malanych, G.P. Stanetska, A.S. Korchovyi, A.A. |
| author_sort |
Levchenko, I.V. |
| title |
Chemical polishing of InAs, InSb, GaAs and GaSb |
| title_short |
Chemical polishing of InAs, InSb, GaAs and GaSb |
| title_full |
Chemical polishing of InAs, InSb, GaAs and GaSb |
| title_fullStr |
Chemical polishing of InAs, InSb, GaAs and GaSb |
| title_full_unstemmed |
Chemical polishing of InAs, InSb, GaAs and GaSb |
| title_sort |
chemical polishing of inas, insb, gaas and gasb |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2017 |
| topic_facet |
Technology |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/136890 |
| citation_txt |
Chemical polishing of InAs, InSb, GaAs and GaSb / I.V. Levchenko, V.M. Tomashyk, I.B. Stratiychuk, G.P. Malanych, A.S. Stanetska, A.A. Korchovyi // Functional Materials. — 2017. — Т. 24, № 4. — С. 654-659. — Бібліогр.: 12 назв. — англ. |
| series |
Functional Materials |
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2023-10-18T21:14:55Z |
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