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Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg

Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg

Equilibrium concentrations of point defects in ZnSe layers obtained by Sn and Mg diffusion fron vapor phase at 1150 K have been calculated using the quasi-chemical reaction method. The calculated results are compared to data obtained fron thermo-e.m.f., conductivity and luminescence spectra measurem...

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Bibliographic Details
Main Authors: Gryvul, V.I., Makhniy, V.P., Tkachenko, I.V.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2007
Series:Functional Materials
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/136987
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http://dspace.nbuv.gov.ua/handle/123456789/136987

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