Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy

The nanostructured silicon surface has been studied using the scanning tunnel microscopy and spectroscopy in air. The local density of electron states was defined as normalized differential tunnel conductivity (dI/dU)(I/U). The surface morphology has been found to be characterized by the presence of...

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Бібліографічні деталі
Дата:2008
Автори: Kulyk, S.P., Melnichenko, M.M., Svezhentsova, K.V., Shmyryova, O.M.
Формат: Стаття
Мова:English
Опубліковано: НТК «Інститут монокристалів» НАН України 2008
Назва видання:Functional Materials
Теми:
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/137225
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy / S.P. Kulyk, M.M. Melnichenko, K.V. Svezhentsova, O.M. Shmyryova // Functional Materials. — 2008. — Т. 15, № 1. — С. 74-77. — Бібліогр.: 6 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1372252018-06-18T03:04:37Z Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy Kulyk, S.P. Melnichenko, M.M. Svezhentsova, K.V. Shmyryova, O.M. Characterization and properties The nanostructured silicon surface has been studied using the scanning tunnel microscopy and spectroscopy in air. The local density of electron states was defined as normalized differential tunnel conductivity (dI/dU)(I/U). The surface morphology has been found to be characterized by the presence of a homogeneous nanostructure on the initial substrate microrelief. For the first time it has been shown that the spectrum of electron states changes considerably during the growth of a nanostructured silicon film. 2008 Article Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy / S.P. Kulyk, M.M. Melnichenko, K.V. Svezhentsova, O.M. Shmyryova // Functional Materials. — 2008. — Т. 15, № 1. — С. 74-77. — Бібліогр.: 6 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/137225 en Functional Materials НТК «Інститут монокристалів» НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
topic Characterization and properties
Characterization and properties
spellingShingle Characterization and properties
Characterization and properties
Kulyk, S.P.
Melnichenko, M.M.
Svezhentsova, K.V.
Shmyryova, O.M.
Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy
Functional Materials
description The nanostructured silicon surface has been studied using the scanning tunnel microscopy and spectroscopy in air. The local density of electron states was defined as normalized differential tunnel conductivity (dI/dU)(I/U). The surface morphology has been found to be characterized by the presence of a homogeneous nanostructure on the initial substrate microrelief. For the first time it has been shown that the spectrum of electron states changes considerably during the growth of a nanostructured silicon film.
format Article
author Kulyk, S.P.
Melnichenko, M.M.
Svezhentsova, K.V.
Shmyryova, O.M.
author_facet Kulyk, S.P.
Melnichenko, M.M.
Svezhentsova, K.V.
Shmyryova, O.M.
author_sort Kulyk, S.P.
title Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy
title_short Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy
title_full Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy
title_fullStr Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy
title_full_unstemmed Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy
title_sort study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy
publisher НТК «Інститут монокристалів» НАН України
publishDate 2008
topic_facet Characterization and properties
url http://dspace.nbuv.gov.ua/handle/123456789/137225
citation_txt Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy / S.P. Kulyk, M.M. Melnichenko, K.V. Svezhentsova, O.M. Shmyryova // Functional Materials. — 2008. — Т. 15, № 1. — С. 74-77. — Бібліогр.: 6 назв. — англ.
series Functional Materials
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AT melnichenkomm studyofnanostructuredlayersofsinglecrystalsiliconbyscanningtunnelspectroscopy
AT svezhentsovakv studyofnanostructuredlayersofsinglecrystalsiliconbyscanningtunnelspectroscopy
AT shmyryovaom studyofnanostructuredlayersofsinglecrystalsiliconbyscanningtunnelspectroscopy
first_indexed 2023-10-18T21:15:49Z
last_indexed 2023-10-18T21:15:49Z
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