Initial stages of diffusion and phase formation in Sc/Si layered systems

• Дата: 2008
• Автори: Voronov, D.L., Zubarev, E.N., Kondratenko, V.V., Pershun, Yu.P., Sevryukova, V.A., Bugayev, Ye.A.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2008
• Назва видання: Functional Materials
• Теми: Characterization and properties
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/137250
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Initial stages of diffusion and phase formation in Sc/Si layered systems / D.L. Voronov, E.N. Zubarev, V.V. Kondratenko, Yu.P. Pershun, V.A. Sevryukova, Ye.A. Bugayev // Functional Materials. — 2008. — Т. 15, № 1. — С. 30-37. — Бібліогр.: 23 назв. — англ.

Kinetics of phase formation Sc/Si multilayers and Si/Sc/Si three-layers within the temperature range of 130-400°C has been studied by cross-sectional transmission electron microscopy and small-angle X-ray reflectometry. Growth of ScSi silicide governed by diffusion kinetics was observed at all tempe...