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Crystal defects in epitaxial InP layers: electrical and scanning electron microscope study

Crystal defects in epitaxial InP layers: electrical and scanning electron microscope study

Electrical characteristics of p-type Au/lnP Schottky junctions with Pt nanoparticles sandwiched in epitaxial layer have been studied and compared with reference samples. Various anomalies have been obtained, some of them are similar to the behavior of quantum dot structures. However, it is concluded...

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Bibliographic Details
Main Authors: Horvath, Zs.J., Toth, A.L., Rakovics, V., Paszti, Z., Peto, G.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2004
Series:Functional Materials
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/138817
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http://dspace.nbuv.gov.ua/handle/123456789/138817

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