Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures

• Дата: 2004
• Автори: Horvath, Zs.J., Orlov, L.K., Ivina, N.L., Demidov, E.S., Vdovin, V.I., Adam, M., Szabo, I., Dozsa, L., Pashaev, E.M., Ivanov, Yu.M., Yakunin, S.N.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2004
• Назва видання: Functional Materials
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/138819
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures / Zs.J. Horvath, L.K. Orlov, N.L. Ivina, E.S. Demidov, V.I. Vdovin , M. Adam, I. Szabo, L. Dozsa, E.M. Pashaev, Yu.M. Ivanov, S.N. Yakunin // Functional Materials. — 2004. — Т. 11, № 2. — С. 381-385. — Бібліогр.: 14 назв. — англ.

Defects in Si/SiGe heterostructures and electrical behavior thereof have been studied. Misfit dislocations were observed in the epitaxial layers using cross-sectional transmission electron microscopy. These defects cause anomalies in the electrical behavior. It has been shown that, in spite of anoma...