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Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures

Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures

Defects in Si/SiGe heterostructures and electrical behavior thereof have been studied. Misfit dislocations were observed in the epitaxial layers using cross-sectional transmission electron microscopy. These defects cause anomalies in the electrical behavior. It has been shown that, in spite of anoma...

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Main Authors: Horvath, Zs.J., Orlov, L.K., Ivina, N.L., Demidov, E.S., Vdovin, V.I., Adam, M., Szabo, I., Dozsa, L., Pashaev, E.M., Ivanov, Yu.M., Yakunin, S.N.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2004
Series:Functional Materials
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/138819
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http://dspace.nbuv.gov.ua/handle/123456789/138819

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