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Relation between structure inhomogeneities and relaxation processes in excited silicon crystals

Relation between structure inhomogeneities and relaxation processes in excited silicon crystals

The part played by electric current pulses in formation of residual electroplastic effect and the "electric memory" effect in dislocation-containing silicon crystals has been investigated. The character of the observed effects has been found to be defined by parameters of electronic excita...

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Bibliographic Details
Main Authors: Makara, V.A., Kolomiets, A.M., Kolchenko, Yu.L., Naumenko, S.M., Rudenko, O.V., Steblenko, L.P.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2004
Series:Functional Materials
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/138821
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http://dspace.nbuv.gov.ua/handle/123456789/138821

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