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Relation between structure inhomogeneities and relaxation processes in excited silicon crystals

Relation between structure inhomogeneities and relaxation processes in excited silicon crystals

The part played by electric current pulses in formation of residual electroplastic effect and the "electric memory" effect in dislocation-containing silicon crystals has been investigated. The character of the observed effects has been found to be defined by parameters of electronic excita...

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Main Authors: Makara, V.A., Kolomiets, A.M., Kolchenko, Yu.L., Naumenko, S.M., Rudenko, O.V., Steblenko, L.P.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2004
Series:Functional Materials
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/138821
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spelling irk-123456789-1388212018-06-20T03:02:48Z Relation between structure inhomogeneities and relaxation processes in excited silicon crystals Makara, V.A. Kolomiets, A.M. Kolchenko, Yu.L. Naumenko, S.M. Rudenko, O.V. Steblenko, L.P. The part played by electric current pulses in formation of residual electroplastic effect and the "electric memory" effect in dislocation-containing silicon crystals has been investigated. The character of the observed effects has been found to be defined by parameters of electronic excitation and to result from relationship between the charge state and its relaxation in motionless and mobile dislocations. Исследована роль импульсного электрического тока в формировании остаточного электропластического эффекта и эффекта "электрической памяти" дислокационных кристаллов кремния. Установлено, что характер найденных эффектов регулируется параметрами электронного возбуждения и обусловливается связью между зарядовым состоянием и его релаксацией в неподвижных и подвижных дислокациях. Досліджєно роль імпульсного електричного струму у формуванні залишкового елек-тропластичного ефекту та ефекту "електричної пам’яті" дислокаційних кристалів кремнію. Встановлено, що характер виявлениех ефектів регулюється параметрами електронного збудження і обумовлюється зв’язком між зарядовим станом і та його релаксацією у нерухомих і рухомих дислокацій. 2004 Article Relation between structure inhomogeneities and relaxation processes in excited silicon crystals / V.A. Makara, A.M. Kolomiets , Yu.L. Kolchenko, S.M. Naumenko, O.V. Rudenko, L.P. Steblenko // Functional Materials. — 2004. — Т. 11, № 2. — С. 386-388. — Бібліогр.: 10 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/138821 en Functional Materials НТК «Інститут монокристалів» НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The part played by electric current pulses in formation of residual electroplastic effect and the "electric memory" effect in dislocation-containing silicon crystals has been investigated. The character of the observed effects has been found to be defined by parameters of electronic excitation and to result from relationship between the charge state and its relaxation in motionless and mobile dislocations.
format Article
author Makara, V.A.
Kolomiets, A.M.
Kolchenko, Yu.L.
Naumenko, S.M.
Rudenko, O.V.
Steblenko, L.P.
spellingShingle Makara, V.A.
Kolomiets, A.M.
Kolchenko, Yu.L.
Naumenko, S.M.
Rudenko, O.V.
Steblenko, L.P.
Relation between structure inhomogeneities and relaxation processes in excited silicon crystals
Functional Materials
author_facet Makara, V.A.
Kolomiets, A.M.
Kolchenko, Yu.L.
Naumenko, S.M.
Rudenko, O.V.
Steblenko, L.P.
author_sort Makara, V.A.
title Relation between structure inhomogeneities and relaxation processes in excited silicon crystals
title_short Relation between structure inhomogeneities and relaxation processes in excited silicon crystals
title_full Relation between structure inhomogeneities and relaxation processes in excited silicon crystals
title_fullStr Relation between structure inhomogeneities and relaxation processes in excited silicon crystals
title_full_unstemmed Relation between structure inhomogeneities and relaxation processes in excited silicon crystals
title_sort relation between structure inhomogeneities and relaxation processes in excited silicon crystals
publisher НТК «Інститут монокристалів» НАН України
publishDate 2004
url http://dspace.nbuv.gov.ua/handle/123456789/138821
citation_txt Relation between structure inhomogeneities and relaxation processes in excited silicon crystals / V.A. Makara, A.M. Kolomiets , Yu.L. Kolchenko, S.M. Naumenko, O.V. Rudenko, L.P. Steblenko // Functional Materials. — 2004. — Т. 11, № 2. — С. 386-388. — Бібліогр.: 10 назв. — англ.
series Functional Materials
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AT kolomietsam relationbetweenstructureinhomogeneitiesandrelaxationprocessesinexcitedsiliconcrystals
AT kolchenkoyul relationbetweenstructureinhomogeneitiesandrelaxationprocessesinexcitedsiliconcrystals
AT naumenkosm relationbetweenstructureinhomogeneitiesandrelaxationprocessesinexcitedsiliconcrystals
AT rudenkoov relationbetweenstructureinhomogeneitiesandrelaxationprocessesinexcitedsiliconcrystals
AT steblenkolp relationbetweenstructureinhomogeneitiesandrelaxationprocessesinexcitedsiliconcrystals
first_indexed 2023-10-18T21:19:01Z
last_indexed 2023-10-18T21:19:01Z
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