Relation between structure inhomogeneities and relaxation processes in excited silicon crystals
The part played by electric current pulses in formation of residual electroplastic effect and the "electric memory" effect in dislocation-containing silicon crystals has been investigated. The character of the observed effects has been found to be defined by parameters of electronic excita...
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| Дата: | 2004 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2004
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/138821 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Relation between structure inhomogeneities and relaxation processes in excited silicon crystals / V.A. Makara, A.M. Kolomiets , Yu.L. Kolchenko, S.M. Naumenko, O.V. Rudenko, L.P. Steblenko // Functional Materials. — 2004. — Т. 11, № 2. — С. 386-388. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1388212018-06-20T03:02:48Z Relation between structure inhomogeneities and relaxation processes in excited silicon crystals Makara, V.A. Kolomiets, A.M. Kolchenko, Yu.L. Naumenko, S.M. Rudenko, O.V. Steblenko, L.P. The part played by electric current pulses in formation of residual electroplastic effect and the "electric memory" effect in dislocation-containing silicon crystals has been investigated. The character of the observed effects has been found to be defined by parameters of electronic excitation and to result from relationship between the charge state and its relaxation in motionless and mobile dislocations. Исследована роль импульсного электрического тока в формировании остаточного электропластического эффекта и эффекта "электрической памяти" дислокационных кристаллов кремния. Установлено, что характер найденных эффектов регулируется параметрами электронного возбуждения и обусловливается связью между зарядовым состоянием и его релаксацией в неподвижных и подвижных дислокациях. Досліджєно роль імпульсного електричного струму у формуванні залишкового елек-тропластичного ефекту та ефекту "електричної пам’яті" дислокаційних кристалів кремнію. Встановлено, що характер виявлениех ефектів регулюється параметрами електронного збудження і обумовлюється зв’язком між зарядовим станом і та його релаксацією у нерухомих і рухомих дислокацій. 2004 Article Relation between structure inhomogeneities and relaxation processes in excited silicon crystals / V.A. Makara, A.M. Kolomiets , Yu.L. Kolchenko, S.M. Naumenko, O.V. Rudenko, L.P. Steblenko // Functional Materials. — 2004. — Т. 11, № 2. — С. 386-388. — Бібліогр.: 10 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/138821 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The part played by electric current pulses in formation of residual electroplastic effect and the "electric memory" effect in dislocation-containing silicon crystals has been investigated. The character of the observed effects has been found to be defined by parameters of electronic excitation and to result from relationship between the charge state and its relaxation in motionless and mobile dislocations. |
| format |
Article |
| author |
Makara, V.A. Kolomiets, A.M. Kolchenko, Yu.L. Naumenko, S.M. Rudenko, O.V. Steblenko, L.P. |
| spellingShingle |
Makara, V.A. Kolomiets, A.M. Kolchenko, Yu.L. Naumenko, S.M. Rudenko, O.V. Steblenko, L.P. Relation between structure inhomogeneities and relaxation processes in excited silicon crystals Functional Materials |
| author_facet |
Makara, V.A. Kolomiets, A.M. Kolchenko, Yu.L. Naumenko, S.M. Rudenko, O.V. Steblenko, L.P. |
| author_sort |
Makara, V.A. |
| title |
Relation between structure inhomogeneities and relaxation processes in excited silicon crystals |
| title_short |
Relation between structure inhomogeneities and relaxation processes in excited silicon crystals |
| title_full |
Relation between structure inhomogeneities and relaxation processes in excited silicon crystals |
| title_fullStr |
Relation between structure inhomogeneities and relaxation processes in excited silicon crystals |
| title_full_unstemmed |
Relation between structure inhomogeneities and relaxation processes in excited silicon crystals |
| title_sort |
relation between structure inhomogeneities and relaxation processes in excited silicon crystals |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2004 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/138821 |
| citation_txt |
Relation between structure inhomogeneities and relaxation processes in excited silicon crystals / V.A. Makara, A.M. Kolomiets , Yu.L. Kolchenko, S.M. Naumenko, O.V. Rudenko, L.P. Steblenko // Functional Materials. — 2004. — Т. 11, № 2. — С. 386-388. — Бібліогр.: 10 назв. — англ. |
| series |
Functional Materials |
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2023-10-18T21:19:01Z |
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2023-10-18T21:19:01Z |
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