Properties of the Pb₁-ₓSnₓTe₁-ᵧSeᵧ epitaxial layers grown from the supersaturated melt-solution on dielectric and semiconductor substrates
The epitaxial layers of Pb₁-ₓSnₓTe₁-ᵧSeᵧ quaternary solid solution (thickness of 2 to 11 µm, Nd ≤ 10⁵ сm⁻², n(p) = (0.9 to 8.7)·10¹⁷ сm⁻³ and µₕ = (0.1 to 24)·10³ сm²·V⁻¹·s⁻¹ at T - 80 К), lattice-matched with KCI, BaF₂, Рb₀.₈₀Sn₀.₂₀Те, and РbТе₀.₉₂Sе₀.₀₈ substrates, were grown in a wide compositio...
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| Дата: | 2005 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
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НТК «Інститут монокристалів» НАН України
2005
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/139315 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Properties of the Pb₁-ₓSnₓTe₁-ᵧSeᵧ epitaxial layers grown from the supersaturated melt-solution on dielectric and semiconductor substrates / O.N. Tsarenko, S.I. Ryabets, A.I. Tkachuk // Functional Materials. — 2005. — Т. 12, № 3. — С. 526-530. — Бібліогр.: 8 назв. — англ. |
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irk-123456789-1393152018-06-21T03:04:14Z Properties of the Pb₁-ₓSnₓTe₁-ᵧSeᵧ epitaxial layers grown from the supersaturated melt-solution on dielectric and semiconductor substrates Tsarenko, O.N. Ryabets, S.I. Tkachuk, A.I. The epitaxial layers of Pb₁-ₓSnₓTe₁-ᵧSeᵧ quaternary solid solution (thickness of 2 to 11 µm, Nd ≤ 10⁵ сm⁻², n(p) = (0.9 to 8.7)·10¹⁷ сm⁻³ and µₕ = (0.1 to 24)·10³ сm²·V⁻¹·s⁻¹ at T - 80 К), lattice-matched with KCI, BaF₂, Рb₀.₈₀Sn₀.₂₀Те, and РbТе₀.₉₂Sе₀.₀₈ substrates, were grown in a wide composition range by the liquid phase epitaxy technique at a programmed overcooling of supersaturated melt-solution. Методом рiдинної епiтаксiї при програмному переохолодженнi пересиченого розчину-розплаву на пiдкладках KCI, BaF₂, Рb₀.₈₀Sn₀.₂₀Те, і РbТе₀.₉₂Sе₀.₀₈ у широкому дiапазонi складiв вирощенi iзоперiоднi епiтаксiйнi шари чотирикомпонентних твердих розчинiв Pb₁-ₓSnₓTe₁-ᵧSeᵧ товщиною 2/11 мкм з Nd ≤ 10⁵ см⁻², n(p) = (0.9 to 8.7)·10¹⁷ см⁻³ and µₕ = (0.1 to 24)·10³ см²·V⁻¹·s⁻¹ at T - 80 К. Методом жидкофазной эпитаксии при программном переохлаждении пересыщенного раствора-расплава на подложках KCI, BaF₂, Рb₀.₈₀Sn₀.₂₀Те, и РbТе₀.₉₂Sе₀.₀₈ в широком диапазоне составов выращены изопериодные эпитаксиальные слои четырёхкомпонентных твёрдых растворов Pb₁-ₓSnₓTe₁-ᵧSeᵧ толщиной 2/11 мкм з Nd ≤ 10⁵ см⁻², n(p) = (0.9 to 8.7)·10¹⁷ см⁻³ и µₕ = (0.1 to 24)·10³ см²·V⁻¹·s⁻¹ at T - 80 К. 2005 Article Properties of the Pb₁-ₓSnₓTe₁-ᵧSeᵧ epitaxial layers grown from the supersaturated melt-solution on dielectric and semiconductor substrates / O.N. Tsarenko, S.I. Ryabets, A.I. Tkachuk // Functional Materials. — 2005. — Т. 12, № 3. — С. 526-530. — Бібліогр.: 8 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/139315 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The epitaxial layers of Pb₁-ₓSnₓTe₁-ᵧSeᵧ quaternary solid solution (thickness of 2 to 11 µm, Nd ≤ 10⁵ сm⁻², n(p) = (0.9 to 8.7)·10¹⁷ сm⁻³ and µₕ = (0.1 to 24)·10³ сm²·V⁻¹·s⁻¹ at T - 80 К), lattice-matched with KCI, BaF₂, Рb₀.₈₀Sn₀.₂₀Те, and РbТе₀.₉₂Sе₀.₀₈ substrates, were grown in a wide composition range by the liquid phase epitaxy technique at a programmed overcooling of supersaturated melt-solution. |
| format |
Article |
| author |
Tsarenko, O.N. Ryabets, S.I. Tkachuk, A.I. |
| spellingShingle |
Tsarenko, O.N. Ryabets, S.I. Tkachuk, A.I. Properties of the Pb₁-ₓSnₓTe₁-ᵧSeᵧ epitaxial layers grown from the supersaturated melt-solution on dielectric and semiconductor substrates Functional Materials |
| author_facet |
Tsarenko, O.N. Ryabets, S.I. Tkachuk, A.I. |
| author_sort |
Tsarenko, O.N. |
| title |
Properties of the Pb₁-ₓSnₓTe₁-ᵧSeᵧ epitaxial layers grown from the supersaturated melt-solution on dielectric and semiconductor substrates |
| title_short |
Properties of the Pb₁-ₓSnₓTe₁-ᵧSeᵧ epitaxial layers grown from the supersaturated melt-solution on dielectric and semiconductor substrates |
| title_full |
Properties of the Pb₁-ₓSnₓTe₁-ᵧSeᵧ epitaxial layers grown from the supersaturated melt-solution on dielectric and semiconductor substrates |
| title_fullStr |
Properties of the Pb₁-ₓSnₓTe₁-ᵧSeᵧ epitaxial layers grown from the supersaturated melt-solution on dielectric and semiconductor substrates |
| title_full_unstemmed |
Properties of the Pb₁-ₓSnₓTe₁-ᵧSeᵧ epitaxial layers grown from the supersaturated melt-solution on dielectric and semiconductor substrates |
| title_sort |
properties of the pb₁-ₓsnₓte₁-ᵧseᵧ epitaxial layers grown from the supersaturated melt-solution on dielectric and semiconductor substrates |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2005 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/139315 |
| citation_txt |
Properties of the Pb₁-ₓSnₓTe₁-ᵧSeᵧ epitaxial layers grown from the supersaturated melt-solution on dielectric and semiconductor substrates / O.N. Tsarenko, S.I. Ryabets, A.I. Tkachuk // Functional Materials. — 2005. — Т. 12, № 3. — С. 526-530. — Бібліогр.: 8 назв. — англ. |
| series |
Functional Materials |
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