Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe
Conditions for production of photosensitive anisotypic n-FeS₂/p-InSe heterojunctions by the method of low-temperature spray-pyrolysis of thin films of pyrite on crystalline p-InSe substrates are studied. On the basis of analysis of temperature dependences of direct and reverse VACs (Volt-Ampere Char...
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| Дата: | 2018 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2018
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/157164 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe / I.G. Tkachuk, I.G. Orletsky, Z.D. Kovalyuk, P.D. Marianchuk// Functional Materials. — 2018. — Т. 25, № 3. — С. 463-470. — Бібліогр.: 37 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-157164 |
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dspace |
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irk-123456789-1571642019-06-20T01:26:02Z Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe Tkachuk, I.G. Orletsky, I.G. Kovalyuk, Z.D. Marianchuk, P.D. Characterization and properties Conditions for production of photosensitive anisotypic n-FeS₂/p-InSe heterojunctions by the method of low-temperature spray-pyrolysis of thin films of pyrite on crystalline p-InSe substrates are studied. On the basis of analysis of temperature dependences of direct and reverse VACs (Volt-Ampere Characteristics), the dynamics of the change in energy parameters is established and the role of the energy states at the heterojunction boundary in formation of the contact potential difference is determined. A model of the energy diagram of the heterojunction is proposed, which describes well the electrophysical phenomena observed during the experiment. The mechanisms of formation of direct and return currents through the energy barrier of n-FeS₂/p-InSe are determined. 2018 Article Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe / I.G. Tkachuk, I.G. Orletsky, Z.D. Kovalyuk, P.D. Marianchuk// Functional Materials. — 2018. — Т. 25, № 3. — С. 463-470. — Бібліогр.: 37 назв. — англ. 1027-5495 DOI:https://doi.org/10.15407/fm25.03.463 http://dspace.nbuv.gov.ua/handle/123456789/157164 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Characterization and properties Characterization and properties |
| spellingShingle |
Characterization and properties Characterization and properties Tkachuk, I.G. Orletsky, I.G. Kovalyuk, Z.D. Marianchuk, P.D. Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe Functional Materials |
| description |
Conditions for production of photosensitive anisotypic n-FeS₂/p-InSe heterojunctions by the method of low-temperature spray-pyrolysis of thin films of pyrite on crystalline p-InSe substrates are studied. On the basis of analysis of temperature dependences of direct and reverse VACs (Volt-Ampere Characteristics), the dynamics of the change in energy parameters is established and the role of the energy states at the heterojunction boundary in formation of the contact potential difference is determined. A model of the energy diagram of the heterojunction is proposed, which describes well the electrophysical phenomena observed during the experiment. The mechanisms of formation of direct and return currents through the energy barrier of n-FeS₂/p-InSe are determined. |
| format |
Article |
| author |
Tkachuk, I.G. Orletsky, I.G. Kovalyuk, Z.D. Marianchuk, P.D. |
| author_facet |
Tkachuk, I.G. Orletsky, I.G. Kovalyuk, Z.D. Marianchuk, P.D. |
| author_sort |
Tkachuk, I.G. |
| title |
Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe |
| title_short |
Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe |
| title_full |
Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe |
| title_fullStr |
Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe |
| title_full_unstemmed |
Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe |
| title_sort |
electrical properties of photosensitive heterostructures n-fes₂/p-inse |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2018 |
| topic_facet |
Characterization and properties |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/157164 |
| citation_txt |
Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe / I.G. Tkachuk, I.G. Orletsky, Z.D. Kovalyuk, P.D. Marianchuk// Functional Materials. — 2018. — Т. 25, № 3. — С. 463-470. — Бібліогр.: 37 назв. — англ. |
| series |
Functional Materials |
| work_keys_str_mv |
AT tkachukig electricalpropertiesofphotosensitiveheterostructuresnfes2pinse AT orletskyig electricalpropertiesofphotosensitiveheterostructuresnfes2pinse AT kovalyukzd electricalpropertiesofphotosensitiveheterostructuresnfes2pinse AT marianchukpd electricalpropertiesofphotosensitiveheterostructuresnfes2pinse |
| first_indexed |
2023-05-20T17:51:22Z |
| last_indexed |
2023-05-20T17:51:22Z |
| _version_ |
1796154249528213504 |