Temperature effect on the characteristics and lifetime of semiconductor detectors
The paper reports the results from studies into the effect of temperature on the performance characteristics of planar silicon detectors designed and manufactured at the NSC KIPT. A variety of techniques are demonstrated for measuring the temperature effect on various static and spectral character...
Збережено в:
| Дата: | 2006 |
|---|---|
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2006
|
| Назва видання: | Вопросы атомной науки и техники |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/79871 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Temperature effect on the characteristics and lifetime of semiconductor detectors / G.P. Vasiliyev, A.V. Kosinov, V.I. Kulibaba, N.I. Maslov, S.V. Naumov, V.D. Ovchinnik, V.I. Yalovenko // Вопросы атомной науки и техники. — 2006. — № 3. — С. 137-139. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The paper reports the results from studies into the effect of temperature on the performance characteristics of planar
silicon detectors designed and manufactured at the NSC KIPT. A variety of techniques are demonstrated for
measuring the temperature effect on various static and spectral characteristics of single-channel planar detectors. The
relationship between the static characteristics of detectors and their long-term stability and lifetime is considered. |
|---|