Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation
In this work is shown that: (i) The energies of critical points in the zone diagram of the silicon substrate change under the radiationstimulation relaxation of IMS that was shown by the shifting the electroreflectance and RS spectra; (ii) The Si-SiO2 interface structure is regulated under the ele...
Збережено в:
| Дата: | 1999 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
1999
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| Назва видання: | Вопросы атомной науки и техники |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/81353 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation / L.A. Matveeva, E.F. Vanger, R.Yu. Holine // Вопросы атомной науки и техники. — 1999. — № 3. — С. 103-104. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | In this work is shown that:
(i) The energies of critical points in the zone diagram of the silicon substrate change under the radiationstimulation relaxation of IMS that was shown by the shifting the electroreflectance and RS spectra;
(ii) The Si-SiO2 interface structure is regulated under the electron irradiation that was shown by the compression of the location region of the plastic deformation to the interface region;
(iii) For IMS relaxation and structural regulation of the interface the electron irradiation with high energy is more effective than that with energy less than the threshold one for the silicon. |
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