Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation
In this work is shown that: (i) The energies of critical points in the zone diagram of the silicon substrate change under the radiationstimulation relaxation of IMS that was shown by the shifting the electroreflectance and RS spectra; (ii) The Si-SiO2 interface structure is regulated under the ele...
Збережено в:
| Дата: | 1999 |
|---|---|
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
1999
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| Назва видання: | Вопросы атомной науки и техники |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/81353 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation / L.A. Matveeva, E.F. Vanger, R.Yu. Holine // Вопросы атомной науки и техники. — 1999. — № 3. — С. 103-104. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-81353 |
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| record_format |
dspace |
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irk-123456789-813532015-05-15T03:02:39Z Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation Matveeva, L.A. Vanger, E.F. Holiney, R.Yu. In this work is shown that: (i) The energies of critical points in the zone diagram of the silicon substrate change under the radiationstimulation relaxation of IMS that was shown by the shifting the electroreflectance and RS spectra; (ii) The Si-SiO2 interface structure is regulated under the electron irradiation that was shown by the compression of the location region of the plastic deformation to the interface region; (iii) For IMS relaxation and structural regulation of the interface the electron irradiation with high energy is more effective than that with energy less than the threshold one for the silicon. 1999 Article Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation / L.A. Matveeva, E.F. Vanger, R.Yu. Holine // Вопросы атомной науки и техники. — 1999. — № 3. — С. 103-104. — Бібліогр.: 7 назв. — англ. 1562-6016 http://dspace.nbuv.gov.ua/handle/123456789/81353 en Вопросы атомной науки и техники Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In this work is shown that:
(i) The energies of critical points in the zone diagram of the silicon substrate change under the radiationstimulation relaxation of IMS that was shown by the shifting the electroreflectance and RS spectra;
(ii) The Si-SiO2 interface structure is regulated under the electron irradiation that was shown by the compression of the location region of the plastic deformation to the interface region;
(iii) For IMS relaxation and structural regulation of the interface the electron irradiation with high energy is more effective than that with energy less than the threshold one for the silicon. |
| format |
Article |
| author |
Matveeva, L.A. Vanger, E.F. Holiney, R.Yu. |
| spellingShingle |
Matveeva, L.A. Vanger, E.F. Holiney, R.Yu. Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation Вопросы атомной науки и техники |
| author_facet |
Matveeva, L.A. Vanger, E.F. Holiney, R.Yu. |
| author_sort |
Matveeva, L.A. |
| title |
Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation |
| title_short |
Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation |
| title_full |
Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation |
| title_fullStr |
Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation |
| title_full_unstemmed |
Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation |
| title_sort |
electron beam application for mechanical stress relaxation and for si-sio₂ interface structural regulation |
| publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| publishDate |
1999 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/81353 |
| citation_txt |
Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation / L.A. Matveeva, E.F. Vanger, R.Yu. Holine // Вопросы атомной науки и техники. — 1999. — № 3. — С. 103-104. — Бібліогр.: 7 назв. — англ. |
| series |
Вопросы атомной науки и техники |
| work_keys_str_mv |
AT matveevala electronbeamapplicationformechanicalstressrelaxationandforsisio2interfacestructuralregulation AT vangeref electronbeamapplicationformechanicalstressrelaxationandforsisio2interfacestructuralregulation AT holineyryu electronbeamapplicationformechanicalstressrelaxationandforsisio2interfacestructuralregulation |
| first_indexed |
2023-10-18T19:23:01Z |
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2023-10-18T19:23:01Z |
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