Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals
It has been shown that a result of InSe crystal oxidation is formation of an intrinsic oxide film that has not insulating but conductive properties. This conductive film forms a potential barrier with the semiconductor substrate. Sheet resistance measurements of the InSe oxide film in dependence...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2011 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117651 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals / V.M. Katerynchuk, Z.D. Kovalyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 106-108. — Бібліогр.: 4 назв. — англ. |
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Katerynchuk, V.M. Kovalyuk, Z.D. 2017-05-25T18:35:15Z 2017-05-25T18:35:15Z 2011 Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals / V.M. Katerynchuk, Z.D. Kovalyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 106-108. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS 73.25.+i, 73.61.-r, 81.16.Rf https://nasplib.isofts.kiev.ua/handle/123456789/117651 It has been shown that a result of InSe crystal oxidation is formation of an intrinsic oxide film that has not insulating but conductive properties. This conductive film forms a potential barrier with the semiconductor substrate. Sheet resistance measurements of the InSe oxide film in dependence on the oxidation time under various temperature conditions were carried out. The resistance was also tested for oxide films obtained for two mutually orthogonal crystal faces: perpendicular and parallel to the с axis. It has been established that the film sheet resistance is substantially changed only for 5 min of the oxidation time, and further oxidation does not affect its value that is about 100-150 Ohm/square. Surface topology of InSe intrinsic oxide was studied using the atomic-force microscopy method. It was found that this surface becomes nanostructured and contains nanoneedles oriented perpendicularly to the plane of sample surface. Dynamics of surface topology changes in dependence on temperature-time conditions of the oxidation process has been ascertained. It manifests itself in a change of lateral and vertical dimensions of nanoneedles as well as their density. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals |
| spellingShingle |
Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals Katerynchuk, V.M. Kovalyuk, Z.D. |
| title_short |
Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals |
| title_full |
Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals |
| title_fullStr |
Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals |
| title_full_unstemmed |
Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals |
| title_sort |
sheet resistance and surface topology time dynamics of intrinsic oxide film on inse crystals |
| author |
Katerynchuk, V.M. Kovalyuk, Z.D. |
| author_facet |
Katerynchuk, V.M. Kovalyuk, Z.D. |
| publishDate |
2011 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
It has been shown that a result of InSe crystal oxidation is formation of an
intrinsic oxide film that has not insulating but conductive properties. This conductive
film forms a potential barrier with the semiconductor substrate. Sheet resistance
measurements of the InSe oxide film in dependence on the oxidation time under various
temperature conditions were carried out. The resistance was also tested for oxide films
obtained for two mutually orthogonal crystal faces: perpendicular and parallel to the с
axis. It has been established that the film sheet resistance is substantially changed only
for 5 min of the oxidation time, and further oxidation does not affect its value that is
about 100-150 Ohm/square. Surface topology of InSe intrinsic oxide was studied using
the atomic-force microscopy method. It was found that this surface becomes
nanostructured and contains nanoneedles oriented perpendicularly to the plane of sample
surface. Dynamics of surface topology changes in dependence on temperature-time
conditions of the oxidation process has been ascertained. It manifests itself in a change of
lateral and vertical dimensions of nanoneedles as well as their density.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117651 |
| citation_txt |
Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals / V.M. Katerynchuk, Z.D. Kovalyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 106-108. — Бібліогр.: 4 назв. — англ. |
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AT katerynchukvm sheetresistanceandsurfacetopologytimedynamicsofintrinsicoxidefilmoninsecrystals AT kovalyukzd sheetresistanceandsurfacetopologytimedynamicsofintrinsicoxidefilmoninsecrystals |
| first_indexed |
2025-12-07T18:16:22Z |
| last_indexed |
2025-12-07T18:16:22Z |
| _version_ |
1850874404843552768 |