Polarization conversion effect in obliquely deposited SiOx films
Structural anisotropy of the SiOx films and nc-Si-SiOx light emitting nanostructures, prepared by oblique deposition of silicon monoxide in vacuum, has been studied using the polarization conversion (PC) effect. For this purpose, a simple method of PC investigation with usage of a standard null-ell...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2011 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117749 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Polarization conversion effect in obliquely deposited SiOx films / M.V. Sopinskyy, I.Z. Indutnyi, K.V. Michailovska, P.E. Shepeliavy, V.M. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 273-278. — Бібліогр.: 21 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862566056974876672 |
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| author | Sopinskyy, M.V. Indutnyi, I.Z. Michailovska, K.V. Shepeliavyi, P.E. Tkach, V.M. |
| author_facet | Sopinskyy, M.V. Indutnyi, I.Z. Michailovska, K.V. Shepeliavyi, P.E. Tkach, V.M. |
| citation_txt | Polarization conversion effect in obliquely deposited SiOx films / M.V. Sopinskyy, I.Z. Indutnyi, K.V. Michailovska, P.E. Shepeliavy, V.M. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 273-278. — Бібліогр.: 21 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Structural anisotropy of the SiOx films and nc-Si-SiOx light emitting nanostructures, prepared by oblique deposition of silicon monoxide in vacuum, has been studied using the polarization conversion (PC) effect. For this purpose, a simple method of PC investigation with usage of a standard null-ellipsometer is proposed and tested. This method is based on the analysis of the azimuthal angle dependence of the offdiagonal elements of the Jones matrix. The electron microscopy study shows that obliquely deposited SiOx films have a porous (column-like) structure with the column diameter and inclination depending on the deposition angle. Polarimetric investigations revealed that both in-plane and out-of-plane anisotropy was present, which is associated with the columnar growth. The correlation between the PC manifestations and the scanning electron microscopy results is analyzed. It was found that the tilt angle of columns in obliquely deposited SiOx is smaller than that predicted by the “tangent rule” and “cosine rule” models, and depends on the crystallographic orientation of Si substrate. It is concluded that the proposed method is effective non-destructive express technique for the structural characterization of obliquely deposited films.
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| first_indexed | 2025-11-26T00:08:25Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-117749 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T00:08:25Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sopinskyy, M.V. Indutnyi, I.Z. Michailovska, K.V. Shepeliavyi, P.E. Tkach, V.M. 2017-05-26T15:57:07Z 2017-05-26T15:57:07Z 2011 Polarization conversion effect in obliquely deposited SiOx films / M.V. Sopinskyy, I.Z. Indutnyi, K.V. Michailovska, P.E. Shepeliavy, V.M. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 273-278. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS 78.20.-e, 81.15-z https://nasplib.isofts.kiev.ua/handle/123456789/117749 Structural anisotropy of the SiOx films and nc-Si-SiOx light emitting nanostructures, prepared by oblique deposition of silicon monoxide in vacuum, has been studied using the polarization conversion (PC) effect. For this purpose, a simple method of PC investigation with usage of a standard null-ellipsometer is proposed and tested. This method is based on the analysis of the azimuthal angle dependence of the offdiagonal elements of the Jones matrix. The electron microscopy study shows that obliquely deposited SiOx films have a porous (column-like) structure with the column diameter and inclination depending on the deposition angle. Polarimetric investigations revealed that both in-plane and out-of-plane anisotropy was present, which is associated with the columnar growth. The correlation between the PC manifestations and the scanning electron microscopy results is analyzed. It was found that the tilt angle of columns in obliquely deposited SiOx is smaller than that predicted by the “tangent rule” and “cosine rule” models, and depends on the crystallographic orientation of Si substrate. It is concluded that the proposed method is effective non-destructive express technique for the structural characterization of obliquely deposited films. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Polarization conversion effect in obliquely deposited SiOx films Article published earlier |
| spellingShingle | Polarization conversion effect in obliquely deposited SiOx films Sopinskyy, M.V. Indutnyi, I.Z. Michailovska, K.V. Shepeliavyi, P.E. Tkach, V.M. |
| title | Polarization conversion effect in obliquely deposited SiOx films |
| title_full | Polarization conversion effect in obliquely deposited SiOx films |
| title_fullStr | Polarization conversion effect in obliquely deposited SiOx films |
| title_full_unstemmed | Polarization conversion effect in obliquely deposited SiOx films |
| title_short | Polarization conversion effect in obliquely deposited SiOx films |
| title_sort | polarization conversion effect in obliquely deposited siox films |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117749 |
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