Influence of small miscuts on self-ordered growth of Ge nanoislands
Using high-resolution X-ray diffraction (HRXRD), we have investigated
 lateral ordering the nanoislands formed from Ge wetting layer of various thicknesses
 deposited on a strained Si₁₋xGex sublayer. We observed that the high lateral ordering
 degree is initiated by ordered m...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2011 |
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117796 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of small miscuts on self-ordered growth of Ge nanoislands / O.Yo. Gudymenko, V.P. Kladko, O.M. Yefanov, M.V. Slobodian, Yu.S.Polischuk, Z.F. Krasilnik, D.V. Lobanov, А.А. Novikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 389-392. — Бібліогр.: 18 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862531853271957504 |
|---|---|
| author | Gudymenko, O.Yo. Kladko, V.P. Yefanov, O.M. Slobodian, M.V. Polischuk, Yu.S. Krasilnik, Z.F. Lobanov, D.V. Novikov, А.А. |
| author_facet | Gudymenko, O.Yo. Kladko, V.P. Yefanov, O.M. Slobodian, M.V. Polischuk, Yu.S. Krasilnik, Z.F. Lobanov, D.V. Novikov, А.А. |
| citation_txt | Influence of small miscuts on self-ordered growth of Ge nanoislands / O.Yo. Gudymenko, V.P. Kladko, O.M. Yefanov, M.V. Slobodian, Yu.S.Polischuk, Z.F. Krasilnik, D.V. Lobanov, А.А. Novikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 389-392. — Бібліогр.: 18 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Using high-resolution X-ray diffraction (HRXRD), we have investigated
lateral ordering the nanoislands formed from Ge wetting layer of various thicknesses
deposited on a strained Si₁₋xGex sublayer. We observed that the high lateral ordering
degree is initiated by ordered modulation of non-uniform deformation fields. This
modulation is induced by small (∼0.3°) misorientation of Si substrate from [001]
direction. Finally, we show that the miscut can be the source of perfectly ordered
nanoisland arrays in two dimensions when the growth is performed on the strained SiGe
(001) sublayer. The effect of substrate miscut can be amplified tuning the deviation of
buffer layer surface from [001] growth direction via increasing the Ge content.
|
| first_indexed | 2025-11-24T04:19:36Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117796 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T04:19:36Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gudymenko, O.Yo. Kladko, V.P. Yefanov, O.M. Slobodian, M.V. Polischuk, Yu.S. Krasilnik, Z.F. Lobanov, D.V. Novikov, А.А. 2017-05-26T17:45:36Z 2017-05-26T17:45:36Z 2011 Influence of small miscuts on self-ordered growth of Ge nanoislands / O.Yo. Gudymenko, V.P. Kladko, O.M. Yefanov, M.V. Slobodian, Yu.S.Polischuk, Z.F. Krasilnik, D.V. Lobanov, А.А. Novikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 389-392. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 68.37.Ef, 81.07.Ta, 81.16.Rf https://nasplib.isofts.kiev.ua/handle/123456789/117796 Using high-resolution X-ray diffraction (HRXRD), we have investigated
 lateral ordering the nanoislands formed from Ge wetting layer of various thicknesses
 deposited on a strained Si₁₋xGex sublayer. We observed that the high lateral ordering
 degree is initiated by ordered modulation of non-uniform deformation fields. This
 modulation is induced by small (∼0.3°) misorientation of Si substrate from [001]
 direction. Finally, we show that the miscut can be the source of perfectly ordered
 nanoisland arrays in two dimensions when the growth is performed on the strained SiGe
 (001) sublayer. The effect of substrate miscut can be amplified tuning the deviation of
 buffer layer surface from [001] growth direction via increasing the Ge content. The authors acknowledge the financial support of
 the National Academy of Sciences of Ukraine (projects
 No 3.5.1.12, No 3.5.1.30) and State Agency for Science,
 Innovation and Informatization of Ukraine (project
 M/ 212 − 2011). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of small miscuts on self-ordered growth of Ge nanoislands Article published earlier |
| spellingShingle | Influence of small miscuts on self-ordered growth of Ge nanoislands Gudymenko, O.Yo. Kladko, V.P. Yefanov, O.M. Slobodian, M.V. Polischuk, Yu.S. Krasilnik, Z.F. Lobanov, D.V. Novikov, А.А. |
| title | Influence of small miscuts on self-ordered growth of Ge nanoislands |
| title_full | Influence of small miscuts on self-ordered growth of Ge nanoislands |
| title_fullStr | Influence of small miscuts on self-ordered growth of Ge nanoislands |
| title_full_unstemmed | Influence of small miscuts on self-ordered growth of Ge nanoislands |
| title_short | Influence of small miscuts on self-ordered growth of Ge nanoislands |
| title_sort | influence of small miscuts on self-ordered growth of ge nanoislands |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117796 |
| work_keys_str_mv | AT gudymenkooyo influenceofsmallmiscutsonselforderedgrowthofgenanoislands AT kladkovp influenceofsmallmiscutsonselforderedgrowthofgenanoislands AT yefanovom influenceofsmallmiscutsonselforderedgrowthofgenanoislands AT slobodianmv influenceofsmallmiscutsonselforderedgrowthofgenanoislands AT polischukyus influenceofsmallmiscutsonselforderedgrowthofgenanoislands AT krasilnikzf influenceofsmallmiscutsonselforderedgrowthofgenanoislands AT lobanovdv influenceofsmallmiscutsonselforderedgrowthofgenanoislands AT novikovaa influenceofsmallmiscutsonselforderedgrowthofgenanoislands |