Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities
The investigation shows that the specific conductivity of Mo sharply decreases exponentially under the temperature influence within the range from ~20 to ~60 K or under the Re impurity influence in the concentration range up to 3 4 at.% and then transforms into the power dependence. Noted th...
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| Datum: | 2011 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117801 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities / Т.А. Ignatyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 482-488. — Бібліогр.: 19 назв. — англ. |
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nasplib_isofts_kiev_ua-123456789-1178012025-06-03T16:28:46Z Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities Ignatyeva, Т.А. The investigation shows that the specific conductivity of Mo sharply decreases exponentially under the temperature influence within the range from ~20 to ~60 K or under the Re impurity influence in the concentration range up to 3 4 at.% and then transforms into the power dependence. Noted there are two singularities in the Mo specific conductivity, namely, an exponential conductivity change within the small energy range and the presence of a threshold energy value equivalent to ~50 K, which can be related to the mobility edge for localized electron states at the spectrum edge in the vicinity of the critical energy C1 (arising of a small-size electron lens). The identity in the behavior of Mo specific conductivity change, independently on the external parameter influencing on the Fermi level position relatively to the critical points of the electron spectrum, is shown. This fact permits to assume that the singularities under consideration can be related to the partial dielectric behavior of the electron spectrum, depending on the Fermi level position relatively to the critical energies 2011 Article Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities / Т.А. Ignatyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 482-488. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS 71.20.-b, 71.23.-k, 73.20.-r https://nasplib.isofts.kiev.ua/handle/123456789/117801 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The investigation shows that the specific conductivity of Mo sharply decreases
exponentially under the temperature influence within the range from ~20 to ~60 K or
under the Re impurity influence in the concentration range up to 3 4 at.% and then
transforms into the power dependence. Noted there are two singularities in the Mo
specific conductivity, namely, an exponential conductivity change within the small
energy range and the presence of a threshold energy value equivalent to ~50 K, which
can be related to the mobility edge for localized electron states at the spectrum edge in
the vicinity of the critical energy C1 (arising of a small-size electron lens). The identity
in the behavior of Mo specific conductivity change, independently on the external
parameter influencing on the Fermi level position relatively to the critical points of the
electron spectrum, is shown. This fact permits to assume that the singularities under
consideration can be related to the partial dielectric behavior of the electron spectrum,
depending on the Fermi level position relatively to the critical energies |
| format |
Article |
| author |
Ignatyeva, Т.А. |
| spellingShingle |
Ignatyeva, Т.А. Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Ignatyeva, Т.А. |
| author_sort |
Ignatyeva, Т.А. |
| title |
Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities |
| title_short |
Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities |
| title_full |
Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities |
| title_fullStr |
Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities |
| title_full_unstemmed |
Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities |
| title_sort |
partial dielectric behavior of the mo electron spectrum as an effect of van hove singularities |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2011 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117801 |
| citation_txt |
Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities / Т.А. Ignatyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 482-488. — Бібліогр.: 19 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT ignatyevata partialdielectricbehaviorofthemoelectronspectrumasaneffectofvanhovesingularities |
| first_indexed |
2025-11-25T20:43:29Z |
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2025-11-25T20:43:29Z |
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1849796496768106496 |