Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2003
• Hauptverfasser: Gentsar, P.A., Matveeva, L.A., Kudryavtsev, A.A., Venger, E.F.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117992
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium / P.A. Gentsar, L.A. Matveeva, A.A. Kudryavtsev, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 141-146. — Бібліогр.: 16 назв. — англ.

Electroreflectance spectra of chemically etched (110) surface of intrinsic germanium are measured in the range of E₁, E₁ + Δ₁ transitions for ||[100] and ||[10] directions of the polarization vector. Separated are isotropic (surface) and anisotropic (bulk) electroreflectance components. The spectrum of the bulk electroreflectance component (the Keldysh-Franz effect), as it can be deduced from its phase, corresponds to the case when energy bands are bent up if going to the surface. This situation is possible in the conditions of filling the bands only at presence of an extremum in the semiconductor energy scheme. Appearance of this extremum can be related to the fact that the electron wave function at the surface is equal to zero or defermined by mirror image force action.