An improved contribution to optimize Si and GaAs solar cell performances
In resent years a considerable effort (experience, numerical simulation and theoretical prediction models) has been devoted to the study of photovoltaic devices characterised by high efficiency and low cost. The present study comes in way to contribute in the optimisation of the performance of Si an...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2004 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118145 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | An improved contribution to optimize Si and GaAs solar cell performances / N. Merabtine, S. Amourache, M. Bouaouina, M. Zaabat, Y. Saidi, C. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 108-111. — Бібліогр.: 5 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862559029731000320 |
|---|---|
| author | Merabtine, N. Amourache, S. Bouaouina, M. Zaabat, M. Saidi, Y. Kenzai, C. |
| author_facet | Merabtine, N. Amourache, S. Bouaouina, M. Zaabat, M. Saidi, Y. Kenzai, C. |
| citation_txt | An improved contribution to optimize Si and GaAs solar cell performances / N. Merabtine, S. Amourache, M. Bouaouina, M. Zaabat, Y. Saidi, C. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 108-111. — Бібліогр.: 5 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In resent years a considerable effort (experience, numerical simulation and theoretical prediction models) has been devoted to the study of photovoltaic devices characterised by high efficiency and low cost. The present study comes in way to contribute in the optimisation of the performance of Si an GaAs based (N/P) solar cells by the determination of physical and technological parameters giving the best photovoltaic conversion efficiency and a good spectral response. The four principal parameters that influence the operation of a solar cell are emitter and base doping, junction depth and base thickness. We have also taken into account the recent technique of elaboration of these structures. This study concerns the use of novel optimised values of electronic properties of GaAs and Si materials such as recombination velocity at surface (front and back). All enhancements recently reached: BSF, BSR layers, ARC anti reflection layer with textured surface, surfaces passivation, improved ohmic contacts are taken into account. I-V, P-V, EQE-λ characteristics obtained by PC1D similator on two different cells (Si and GaAs) under the global spectra AM1.5 have allowed us to get optimal cells. The comparison of the cells shows the advantage of given GaAs cells. The effect of solar concentration (1-100 suns) on cell operation has been studied. The later has contributed to the enhancement of the energetic efficiency. The effects different standard spetra such as AM1, AM1, 5G, and AM1.5D have been studied. The optimal values of physical parameters giving the best currents of short-circuit and voltages of open circuit as well as high conversion efficiency have been obtained for these two solar materials.
|
| first_indexed | 2025-11-25T22:46:31Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118145 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T22:46:31Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Merabtine, N. Amourache, S. Bouaouina, M. Zaabat, M. Saidi, Y. Kenzai, C. 2017-05-28T18:33:56Z 2017-05-28T18:33:56Z 2004 An improved contribution to optimize Si and GaAs solar cell performances / N. Merabtine, S. Amourache, M. Bouaouina, M. Zaabat, Y. Saidi, C. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 108-111. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS: 84.60.Jt https://nasplib.isofts.kiev.ua/handle/123456789/118145 In resent years a considerable effort (experience, numerical simulation and theoretical prediction models) has been devoted to the study of photovoltaic devices characterised by high efficiency and low cost. The present study comes in way to contribute in the optimisation of the performance of Si an GaAs based (N/P) solar cells by the determination of physical and technological parameters giving the best photovoltaic conversion efficiency and a good spectral response. The four principal parameters that influence the operation of a solar cell are emitter and base doping, junction depth and base thickness. We have also taken into account the recent technique of elaboration of these structures. This study concerns the use of novel optimised values of electronic properties of GaAs and Si materials such as recombination velocity at surface (front and back). All enhancements recently reached: BSF, BSR layers, ARC anti reflection layer with textured surface, surfaces passivation, improved ohmic contacts are taken into account. I-V, P-V, EQE-λ characteristics obtained by PC1D similator on two different cells (Si and GaAs) under the global spectra AM1.5 have allowed us to get optimal cells. The comparison of the cells shows the advantage of given GaAs cells. The effect of solar concentration (1-100 suns) on cell operation has been studied. The later has contributed to the enhancement of the energetic efficiency. The effects different standard spetra such as AM1, AM1, 5G, and AM1.5D have been studied. The optimal values of physical parameters giving the best currents of short-circuit and voltages of open circuit as well as high conversion efficiency have been obtained for these two solar materials. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics An improved contribution to optimize Si and GaAs solar cell performances Article published earlier |
| spellingShingle | An improved contribution to optimize Si and GaAs solar cell performances Merabtine, N. Amourache, S. Bouaouina, M. Zaabat, M. Saidi, Y. Kenzai, C. |
| title | An improved contribution to optimize Si and GaAs solar cell performances |
| title_full | An improved contribution to optimize Si and GaAs solar cell performances |
| title_fullStr | An improved contribution to optimize Si and GaAs solar cell performances |
| title_full_unstemmed | An improved contribution to optimize Si and GaAs solar cell performances |
| title_short | An improved contribution to optimize Si and GaAs solar cell performances |
| title_sort | improved contribution to optimize si and gaas solar cell performances |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118145 |
| work_keys_str_mv | AT merabtinen animprovedcontributiontooptimizesiandgaassolarcellperformances AT amouraches animprovedcontributiontooptimizesiandgaassolarcellperformances AT bouaouinam animprovedcontributiontooptimizesiandgaassolarcellperformances AT zaabatm animprovedcontributiontooptimizesiandgaassolarcellperformances AT saidiy animprovedcontributiontooptimizesiandgaassolarcellperformances AT kenzaic animprovedcontributiontooptimizesiandgaassolarcellperformances AT merabtinen improvedcontributiontooptimizesiandgaassolarcellperformances AT amouraches improvedcontributiontooptimizesiandgaassolarcellperformances AT bouaouinam improvedcontributiontooptimizesiandgaassolarcellperformances AT zaabatm improvedcontributiontooptimizesiandgaassolarcellperformances AT saidiy improvedcontributiontooptimizesiandgaassolarcellperformances AT kenzaic improvedcontributiontooptimizesiandgaassolarcellperformances |