An improved contribution to optimize Si and GaAs solar cell performances

In resent years a considerable effort (experience, numerical simulation and theoretical prediction models) has been devoted to the study of photovoltaic devices characterised by high efficiency and low cost. The present study comes in way to contribute in the optimisation of the performance of Si an...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2004
Hauptverfasser:	Merabtine, N., Amourache, S., Bouaouina, M., Zaabat, M., Saidi, Y., Kenzai, C.
Format:	Artikel
Sprache:	English
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/118145
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Zitieren:	An improved contribution to optimize Si and GaAs solar cell performances / N. Merabtine, S. Amourache, M. Bouaouina, M. Zaabat, Y. Saidi, C. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 108-111. — Бібліогр.: 5 назв. — англ.

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spelling	Merabtine, N. Amourache, S. Bouaouina, M. Zaabat, M. Saidi, Y. Kenzai, C. 2017-05-28T18:33:56Z 2017-05-28T18:33:56Z 2004 An improved contribution to optimize Si and GaAs solar cell performances / N. Merabtine, S. Amourache, M. Bouaouina, M. Zaabat, Y. Saidi, C. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 108-111. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS: 84.60.Jt https://nasplib.isofts.kiev.ua/handle/123456789/118145 In resent years a considerable effort (experience, numerical simulation and theoretical prediction models) has been devoted to the study of photovoltaic devices characterised by high efficiency and low cost. The present study comes in way to contribute in the optimisation of the performance of Si an GaAs based (N/P) solar cells by the determination of physical and technological parameters giving the best photovoltaic conversion efficiency and a good spectral response. The four principal parameters that influence the operation of a solar cell are emitter and base doping, junction depth and base thickness. We have also taken into account the recent technique of elaboration of these structures. This study concerns the use of novel optimised values of electronic properties of GaAs and Si materials such as recombination velocity at surface (front and back). All enhancements recently reached: BSF, BSR layers, ARC anti reflection layer with textured surface, surfaces passivation, improved ohmic contacts are taken into account. I-V, P-V, EQE-λ characteristics obtained by PC1D similator on two different cells (Si and GaAs) under the global spectra AM1.5 have allowed us to get optimal cells. The comparison of the cells shows the advantage of given GaAs cells. The effect of solar concentration (1-100 suns) on cell operation has been studied. The later has contributed to the enhancement of the energetic efficiency. The effects different standard spetra such as AM1, AM1, 5G, and AM1.5D have been studied. The optimal values of physical parameters giving the best currents of short-circuit and voltages of open circuit as well as high conversion efficiency have been obtained for these two solar materials. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics An improved contribution to optimize Si and GaAs solar cell performances Article published earlier
institution	Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection	DSpace DC
title	An improved contribution to optimize Si and GaAs solar cell performances
spellingShingle	An improved contribution to optimize Si and GaAs solar cell performances Merabtine, N. Amourache, S. Bouaouina, M. Zaabat, M. Saidi, Y. Kenzai, C.
title_short	An improved contribution to optimize Si and GaAs solar cell performances
title_full	An improved contribution to optimize Si and GaAs solar cell performances
title_fullStr	An improved contribution to optimize Si and GaAs solar cell performances
title_full_unstemmed	An improved contribution to optimize Si and GaAs solar cell performances
title_sort	improved contribution to optimize si and gaas solar cell performances
author	Merabtine, N. Amourache, S. Bouaouina, M. Zaabat, M. Saidi, Y. Kenzai, C.
author_facet	Merabtine, N. Amourache, S. Bouaouina, M. Zaabat, M. Saidi, Y. Kenzai, C.
publishDate	2004
language	English
container_title	Semiconductor Physics Quantum Electronics & Optoelectronics
publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format	Article
description	In resent years a considerable effort (experience, numerical simulation and theoretical prediction models) has been devoted to the study of photovoltaic devices characterised by high efficiency and low cost. The present study comes in way to contribute in the optimisation of the performance of Si an GaAs based (N/P) solar cells by the determination of physical and technological parameters giving the best photovoltaic conversion efficiency and a good spectral response. The four principal parameters that influence the operation of a solar cell are emitter and base doping, junction depth and base thickness. We have also taken into account the recent technique of elaboration of these structures. This study concerns the use of novel optimised values of electronic properties of GaAs and Si materials such as recombination velocity at surface (front and back). All enhancements recently reached: BSF, BSR layers, ARC anti reflection layer with textured surface, surfaces passivation, improved ohmic contacts are taken into account. I-V, P-V, EQE-λ characteristics obtained by PC1D similator on two different cells (Si and GaAs) under the global spectra AM1.5 have allowed us to get optimal cells. The comparison of the cells shows the advantage of given GaAs cells. The effect of solar concentration (1-100 suns) on cell operation has been studied. The later has contributed to the enhancement of the energetic efficiency. The effects different standard spetra such as AM1, AM1, 5G, and AM1.5D have been studied. The optimal values of physical parameters giving the best currents of short-circuit and voltages of open circuit as well as high conversion efficiency have been obtained for these two solar materials.
issn	1560-8034
url	https://nasplib.isofts.kiev.ua/handle/123456789/118145
citation_txt	An improved contribution to optimize Si and GaAs solar cell performances / N. Merabtine, S. Amourache, M. Bouaouina, M. Zaabat, Y. Saidi, C. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 108-111. — Бібліогр.: 5 назв. — англ.
work_keys_str_mv	AT merabtinen animprovedcontributiontooptimizesiandgaassolarcellperformances AT amouraches animprovedcontributiontooptimizesiandgaassolarcellperformances AT bouaouinam animprovedcontributiontooptimizesiandgaassolarcellperformances AT zaabatm animprovedcontributiontooptimizesiandgaassolarcellperformances AT saidiy animprovedcontributiontooptimizesiandgaassolarcellperformances AT kenzaic animprovedcontributiontooptimizesiandgaassolarcellperformances AT merabtinen improvedcontributiontooptimizesiandgaassolarcellperformances AT amouraches improvedcontributiontooptimizesiandgaassolarcellperformances AT bouaouinam improvedcontributiontooptimizesiandgaassolarcellperformances AT zaabatm improvedcontributiontooptimizesiandgaassolarcellperformances AT saidiy improvedcontributiontooptimizesiandgaassolarcellperformances AT kenzaic improvedcontributiontooptimizesiandgaassolarcellperformances
first_indexed	2025-11-25T22:46:31Z
last_indexed	2025-11-25T22:46:31Z
_version_	1850573058801139712
fulltext	Semiconductor Physics, Quantum Electronics & Optoelectronics. 2004. V. 7, N 1. P. 108-111. © 2004, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine108 PACS: 84.60.Jt An improved contribution to optimize Si and GaAs solar cell performances N. Merabtinea, S. Amourachec, M. Bouaouinac, M. Zaabatb, Y. Saidic, C. Kenzaic aLaboratoire Electromagnetisme et Telecommunication. Faculte des Sciences de l'Ingenieur Universite Mentouri Constantine bDepartement de physique, Institut des science Exactes Centre Universitaire d'Oum el Bouaghi 04000 Oum el Bouaghi, Algeria cLaboratoire des couches minces, Faculte des sciences Universite Mentouri Constantine Algeria E-mail: na_merabtine@hotmail.com Abstract. In resent years a considerable effort (experience, numerical simulation and theoreti- cal prediction models) has been devoted to the study of photovoltaic devices characterised by high efficiency and low cost. The present study comes in way to contribute in the optimisation of the performance of Si an GaAs based (N/P) solar cells by the determination of physical and technological parameters giving the best photovoltaic conversion efficiency and a good spec- tral response. The four principal parameters that influence the operation of a solar cell are emitter and base doping, junction depth and base thickness. We have also taken into account the recent technique of elaboration of these structures. This study concerns the use of novel optimised values of electronic properties of GaAs and Si materials such as recombination velocity at surface (front and back). All enhancements recently reached: BSF, BSR layers, ARC anti reflection layer with textured surface, surfaces passivation, improved ohmic con- tacts are taken into account. I�V, P�V, EQE-λ characteristics obtained by PC1D similator on two different cells (Si and GaAs) under the global spectra AM1.5 have allowed us to get optimal cells. The comparison of the cells shows the advantage of given GaAs cells. The effect of solar concentration (1�100 suns) on cell operation has been studied. The later has contrib- uted to the enhancement of the energetic efficiency. The effects different standard spetra such as AM1, AM1, 5G, and AM1.5D have been studied. The optimal values of physical parameters giving the best currents of short-circuit and voltages of open circuit as well as high conversion efficiency have been obtained for these two solar materials. Keywords: photovoltaic cells, Si, GaAs, high efficiency. Paper received 17.10.03; accepted for publication 30.03.04. 1. Introduction Considerable research has been done in the last few years on reducing the manufacturing costs of solar cells, and a big effort (experience, numerical simulation and theo- retical prediction models ) has been devoted to the study of photovoltaic devices characterisation by high effi- ciency [1], [2]. The purpose of this work comes to contribute to the optimisation of the performance of Si and GaAs (N/P) solar cells by the determination of physical and techno- logical parameters giving the best photovoltaic conver- sion efficiency and good spectral response. Four principal parameters that influence the opera- tion of a solar cell are emitter and base doping, junction depth and base thickness. We have also taken into ac- count the recent techniques of elaboration of the struc- tures [3]. This study concerns the use of novel optimised values of electronic properties of GaAs and Si materials such as recombination velocity at surface (front and back). All enhancements recently reached: BSF, BSR layers, ARC antireflection layer with textured surface, surface passiva- tion, improved ohmic contacts are taken into account [4]. In this paper the calculated current-voltage charac- teristics are obtained by PCID program on two different cells (Si and GaAs) under the global spectra AM1.5G, have allowed us to get the optimal cells. The comparison of these two cells shows the advantage given by GaAs cells. The effect of solar concentration (1�100 suns) on N. Merabtine et al.: An improved contribution to optimize Si and GaAs ... 109SQO, 7(1), 2004 cell operation has been studied. For later contributing to the enhancements of the energetic efficiency. The differ- ent standards spectra effect such AM1, AM1.5G, and AM1.5D have been studied. The optimal values of physi- cal parameters giving the best current of short-circuit and voltages of open circuit as well high conversion efficiency have obtained for the two solar materials [5]. 2. Solar cell new structures The structures of our study are shown on the Fig. 1 com- prising the Si or GaAs based material. A passivation lay- ers and an antireflection layer above the basic material are found the BSF layer and the BSR layer. For a better photon absorption, an ACR layer is deposited and the front surface is textured. The use of optimised values of optoelectrical properties concerning the two materials (Si and GaAs) such as the recombination velocity at sur- face (front and back) are taken into consideration. 3. Solar cell simulation The PCID program, designed essentially for the photo- voltaic component modelisation and exploitation, has been used for the study parameters that are: � The doping of the emitter (ND) and base (Na) re- gions, the junction depth XJ and the base thickness XB. � The studied cells performances ae strongly affected by the doping levels in the different regions of the cell (ND-emitter and Na-base) and by the layer dimensions on the current�voltage (I�V) characteristics, Xb: The base depth, XJ, the junction depth and the cells spectral re- sponse. � The optimised values of optoelectronics proper- ties of the two studied materials (Si, GaAs) such as the recombination velocity (front and back) and at volume have been used in this study. � On the other hand all the improvements recently provided to the solar cells such as BSF, BSF layers anti reflection layers with a textured surface, surfaces passivation, improved ohmic contacts are taken into con- sideration. a) Influence of the base parameters on the photovoltaic efficiency: In Fig. 2a, we present the profile of the photovoltaic con- version efficiency as a function of the base parameters particularly for the weak emitter doping Na then sturates beyond 5µm, the best efficiency is obtained for Na = = 5⋅1017cm�3 and a thickness XB = 5µm for GaAs solar cells. For silicon solar cell Fig. 2b as a function of the base thickness and between the doping levels 1⋅1016 cm�3 and 5⋅1016 cm�3 beyond this level, the efficiency will have successive changes until the highest concentration Na = 1⋅1018 cm�3 these parameters make a whole size vary such as the resistivity, the diffusion, the saturation cur- rent the mobility and the diffusion length. We had to find compromise between these whole parameters in order to obtain optimal values Na = 5⋅1016 cm�3 and XB = 200 µm. Fig. 1. Solar cells structures GaAs and Si 110 SQO, 7(1), 2004 N. Merabtine et al.: An improved contribution to optimize Si and GaAs ... b) Junction depth influence on the efficiency In Fig. 3, we present the conversion efficiency as a func- tion of the junction depth. The other parameters being maintained constant the variation decreases rapidly in the sense of the junction depth for GaAs cells and of 0.5 µm for the Si solar cells allows the generated carriers near the surface to be collected. The junction depth in- crease damages the cell performances this is explained by the carriers in order to reach to collect surface before to recombine and contribute to the photocurrent. c) The base parameters influence over the spectral response In Fig. 4, we present the doping effect on the spectral response. In the GaAs case, the spectral response is proved to be independent of the base thickness, it remains constant whatever the thickness XB this is due to the GaAs material absorption properties besides the spectral re- sponse changes as function of the doping Na Fig. 4a. In the silicon case Fig. 4b shows the spectral response dam- age in proportion as the doping increases, a value of 93% Fig. 2. The influence of the base parameters on the photovoltaic efficiency for Si and GaAs cells. X B , mµ 0 5 10 15 20 25 30 35 22.0 22.5 23.0 23.5 24.0 24.5 GaAs( / )n p N D = 5 10⋅ 18 �3 cm NA= 1 10⋅ 16 cm �3 NA= 5 10⋅ 16 cm �3 NA= 1 10⋅ 17 cm �3 NA= 5 10⋅ 17 cm �3 NA= 1 10⋅ 18 cm �3 = 50 mµ⋅ X J a 0.00 0.01 0.02 0.03 0.04 0.05 0.06 15 16 17 18 19 20 Si ( / )n p N D = 5 10⋅ = 50 mµ⋅ 18 cm �3 X J NA= 1 10⋅ 16 cm �3 NA= 5 10⋅ 16 cm �3 NA= 1 10⋅ 17 cm �3 NA= 5 10⋅ 17 cm �3 NA= 1 10⋅ 18 cm �3 X B , mµ b 0.0 0.2 0.4 0.6 0.8 1.0 16 18 20 22 24 26 28 N N D A = 1 10⋅ = 5 10⋅ 18 17 cm cm �3 �3 GaAs( / )n p = 50 . mµ XB XJ , mµ Fig. 3. The junction depth influence on the efficiency. NA= 1 10⋅ 16 cm �3 NA= 1 10⋅ 17cm�3 NA= 4 10⋅ 18cm NA= 1 10⋅ 18cm�3 �3 200 400 600 800 1000 1200 0 20 40 60 80 100 GaAs( / )n p ND = 5 10⋅ 18 �3cm X X B J = 5 m µ = 0.2 mµ NA= 1 10⋅ 16 cm �3 NA= 1 10⋅ 17 cm �3 NA= 5 10⋅ 18 cm NA= 1 10⋅ 18cm�3 �3 ND = 5 10⋅ 18 �3cm X X B J = 200 m µ = 0 5 m. µ 200 400 600 800 1000 1200 0 20 40 60 80 100 Si( / )n p Fig. 4. The base parameters influence on the spectral response. is reached. For short wave lengths beyond 950 nm the spectral response begins to decrease. d) The emitter parameters influence over the spectral response: The spectral response is damaged with the emitter pa- rameters (Figs 5a and 5b) this deterioration is due to car- riers created far form the surface and do not have a suffi- cient wavelength to be collected and to contribute to the photocurrent. a b N. Merabtine et al.: An improved contribution to optimize Si and GaAs ... 111SQO, 7(1), 2004 4. The standard spectral effects on the I-V characteristics In Figs 6a, 6b we have represented the I�V characteris- tics concerning the two studied cells as a function of the three standard spectral AM1, AM1.5G and AM1.5D, the best efficiency being the one obtained for the AM1.5 spectral. 5. Results Based on this study, we have obtained optimal values of the physical and technological parameters offering the best efficiency. a) GaAs solar cell: ND = 5⋅1018 cm�3, Na=5⋅1017 cm�3, XB = 5 µm, XJ = = 0.2 µm, Na = 4⋅1018 cm�3, Wp = 0.2 µm. b) Si solar cell: ND = 5⋅1018 cm�3, Na = 5⋅1016 cm�3, XB = 200 µm, XJ = 0.5 µm, Na = 8⋅1018 cm�3, Wp = 25 µm. These cells offer the following characteristics: a) GaAs efficiency η = 26,8% a form factor FF = = 87.58%, a short circuit current ISC = 0.03A and open circuit voltage VOC = 1,02V. b) Si η = 26,8%, FF = 87.58%, ISC = 0.03A and VOC = 1.02V. The GaAs solar cell has got efficiency greater than that of the Si solar cell in normal working conditions or under concentration. The obtained results are encourag- ing and we intend pursue the study for more complex structures such as the solar tendencies with three junc- tions in order to increase the efficiency. N N N ND D D D = 1 10⋅ = 1 10⋅ = 1 10⋅ = 5 10⋅ 19 18 17 19 cm cm cm cm �3 �3 �3 �3 Si( / )n p ND = 5 10⋅ 18 �3cm X X B J = 200 m µ = 0.5 mµ 200 400 600 800 1000 1200 0 20 40 60 80 100 Fig. 5. The emitter parameters influence over the spectral re- sponse. 6. Conclusions This study allowed us to work out a synthesis on the photovolatic structure and we have determined the opti- mal values of the Si and GaAs solar cells which give the best efficiency. Physical understanding and optimisation of the cell structure is given in all the figures of well established geometrical and electrical cell parameters. Our results are in agreement with the experimental results. References 1. P.A. Basaure // IEEE PVSC Mars, 1989, p. 79. 2. H. Takakura, Y. Hamakawa // Solar energy Materials & solar cells, 74, p. 479-487 (2002). 3. R. Anil Kumar, M.S. Suresh, J. Nagaraju // Solar energy Materials & solar cells, 77, p.145-153 (2003). 4. K. Brecl, F. Smole and J. Furlan // Progress in Photovoltaics Reseach and Applications, 7, p. 449-456 (1999). 5. M.A. Green, K. Emery, K. Bucher, D.L. King and S. Igari // Progress in Photovoltaics Reseach and Applications, 7, p. 31- 37 (1999). �0.6 �0.3 0.0 0.3 0.6 0.9 1.2 �0.02 0.00 0.02 Voltage, V C u rr en t, A Sous AM0 h=22.3 Sous AM1.5D h=23.6 Sous AM1.5G h=26.3 GaAs( / )n p Voltage, V C u rr en t, A �0.2 0.0 0.2 0.4 0.6 0.8 �0.04 �0.02 0.00 0.02 0.04 Sous AM0 h=17.2 Sous AM1.5D h =18.7 Sous AM1.5G h=19.6 Si ( / )n p b Fig. 6. The standard spectral effects on the I�V characteristics.

An improved contribution to optimize Si and GaAs solar cell performances

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