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An improved contribution to optimize Si and GaAs solar cell performances

In resent years a considerable effort (experience, numerical simulation and theoretical prediction models) has been devoted to the study of photovoltaic devices characterised by high efficiency and low cost. The present study comes in way to contribute in the optimisation of the performance of Si an...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2004
Main Authors: Merabtine, N., Amourache, S., Bouaouina, M., Zaabat, M., Saidi, Y., Kenzai, C.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118145
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:An improved contribution to optimize Si and GaAs solar cell performances / N. Merabtine, S. Amourache, M. Bouaouina, M. Zaabat, Y. Saidi, C. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 108-111. — Бібліогр.: 5 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862559029731000320
author Merabtine, N.
Amourache, S.
Bouaouina, M.
Zaabat, M.
Saidi, Y.
Kenzai, C.
author_facet Merabtine, N.
Amourache, S.
Bouaouina, M.
Zaabat, M.
Saidi, Y.
Kenzai, C.
citation_txt An improved contribution to optimize Si and GaAs solar cell performances / N. Merabtine, S. Amourache, M. Bouaouina, M. Zaabat, Y. Saidi, C. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 108-111. — Бібліогр.: 5 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description In resent years a considerable effort (experience, numerical simulation and theoretical prediction models) has been devoted to the study of photovoltaic devices characterised by high efficiency and low cost. The present study comes in way to contribute in the optimisation of the performance of Si an GaAs based (N/P) solar cells by the determination of physical and technological parameters giving the best photovoltaic conversion efficiency and a good spectral response. The four principal parameters that influence the operation of a solar cell are emitter and base doping, junction depth and base thickness. We have also taken into account the recent technique of elaboration of these structures. This study concerns the use of novel optimised values of electronic properties of GaAs and Si materials such as recombination velocity at surface (front and back). All enhancements recently reached: BSF, BSR layers, ARC anti reflection layer with textured surface, surfaces passivation, improved ohmic contacts are taken into account. I-V, P-V, EQE-λ characteristics obtained by PC1D similator on two different cells (Si and GaAs) under the global spectra AM1.5 have allowed us to get optimal cells. The comparison of the cells shows the advantage of given GaAs cells. The effect of solar concentration (1-100 suns) on cell operation has been studied. The later has contributed to the enhancement of the energetic efficiency. The effects different standard spetra such as AM1, AM1, 5G, and AM1.5D have been studied. The optimal values of physical parameters giving the best currents of short-circuit and voltages of open circuit as well as high conversion efficiency have been obtained for these two solar materials.
first_indexed 2025-11-25T22:46:31Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-118145
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-11-25T22:46:31Z
publishDate 2004
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Merabtine, N.
Amourache, S.
Bouaouina, M.
Zaabat, M.
Saidi, Y.
Kenzai, C.
2017-05-28T18:33:56Z
2017-05-28T18:33:56Z
2004
An improved contribution to optimize Si and GaAs solar cell performances / N. Merabtine, S. Amourache, M. Bouaouina, M. Zaabat, Y. Saidi, C. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 108-111. — Бібліогр.: 5 назв. — англ.
1560-8034
PACS: 84.60.Jt
https://nasplib.isofts.kiev.ua/handle/123456789/118145
In resent years a considerable effort (experience, numerical simulation and theoretical prediction models) has been devoted to the study of photovoltaic devices characterised by high efficiency and low cost. The present study comes in way to contribute in the optimisation of the performance of Si an GaAs based (N/P) solar cells by the determination of physical and technological parameters giving the best photovoltaic conversion efficiency and a good spectral response. The four principal parameters that influence the operation of a solar cell are emitter and base doping, junction depth and base thickness. We have also taken into account the recent technique of elaboration of these structures. This study concerns the use of novel optimised values of electronic properties of GaAs and Si materials such as recombination velocity at surface (front and back). All enhancements recently reached: BSF, BSR layers, ARC anti reflection layer with textured surface, surfaces passivation, improved ohmic contacts are taken into account. I-V, P-V, EQE-λ characteristics obtained by PC1D similator on two different cells (Si and GaAs) under the global spectra AM1.5 have allowed us to get optimal cells. The comparison of the cells shows the advantage of given GaAs cells. The effect of solar concentration (1-100 suns) on cell operation has been studied. The later has contributed to the enhancement of the energetic efficiency. The effects different standard spetra such as AM1, AM1, 5G, and AM1.5D have been studied. The optimal values of physical parameters giving the best currents of short-circuit and voltages of open circuit as well as high conversion efficiency have been obtained for these two solar materials.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
An improved contribution to optimize Si and GaAs solar cell performances
Article
published earlier
spellingShingle An improved contribution to optimize Si and GaAs solar cell performances
Merabtine, N.
Amourache, S.
Bouaouina, M.
Zaabat, M.
Saidi, Y.
Kenzai, C.
title An improved contribution to optimize Si and GaAs solar cell performances
title_full An improved contribution to optimize Si and GaAs solar cell performances
title_fullStr An improved contribution to optimize Si and GaAs solar cell performances
title_full_unstemmed An improved contribution to optimize Si and GaAs solar cell performances
title_short An improved contribution to optimize Si and GaAs solar cell performances
title_sort improved contribution to optimize si and gaas solar cell performances
url https://nasplib.isofts.kiev.ua/handle/123456789/118145
work_keys_str_mv AT merabtinen animprovedcontributiontooptimizesiandgaassolarcellperformances
AT amouraches animprovedcontributiontooptimizesiandgaassolarcellperformances
AT bouaouinam animprovedcontributiontooptimizesiandgaassolarcellperformances
AT zaabatm animprovedcontributiontooptimizesiandgaassolarcellperformances
AT saidiy animprovedcontributiontooptimizesiandgaassolarcellperformances
AT kenzaic animprovedcontributiontooptimizesiandgaassolarcellperformances
AT merabtinen improvedcontributiontooptimizesiandgaassolarcellperformances
AT amouraches improvedcontributiontooptimizesiandgaassolarcellperformances
AT bouaouinam improvedcontributiontooptimizesiandgaassolarcellperformances
AT zaabatm improvedcontributiontooptimizesiandgaassolarcellperformances
AT saidiy improvedcontributiontooptimizesiandgaassolarcellperformances
AT kenzaic improvedcontributiontooptimizesiandgaassolarcellperformances

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