Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity
. Investigated in this work were changes in the concentration of charge carriers
 ne and their mobilities u, which occur under the influence of thermoannealing of n - Si
 and n - Ge crystals grown by the Czochralski method. Thermoannealing of n - Si
 samples was carried out b...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2012 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118307 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Peculiarities of thermoannealing in n-Si and n-Ge crystals
 with oxygen impurity / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 218-222. — Бібліогр.: 24 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862582169106382848 |
|---|---|
| author | Baranskii, P.I. Gaidar, G.P. |
| author_facet | Baranskii, P.I. Gaidar, G.P. |
| citation_txt | Peculiarities of thermoannealing in n-Si and n-Ge crystals
 with oxygen impurity / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 218-222. — Бібліогр.: 24 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | . Investigated in this work were changes in the concentration of charge carriers
ne and their mobilities u, which occur under the influence of thermoannealing of n - Si
and n - Ge crystals grown by the Czochralski method. Thermoannealing of n - Si
samples was carried out both at 450 °C and 650 °C. The results of the influence of twostage
(combined) thermoannealing have been presented. In the first series of
experiments, the annealing was performed at 450 °C with varied duration (from 5 to
45 h) at the beginning, and then it was carried out for 40 hours at 650 °C. The second
series of experiments was as follows: the annealing at 450 °C for 45-hour duration, then
the annealing at 650 °C, which was carried out for various periods of time
(5, 10, 20, 45, 66 hours). The observations for changes of ne and u were carried out both
at the temperature 300 and 77 K. It is ascertained that changing the main parameters (ne
and u) in n Ge As heavily doped single crystals, as a result of the series of
thermoannealings (duration 30 min in each case) within the temperature range from 540
to 900 °C, is non-monotonous due to transformation of the thermodonors TD - I into
TD-II .
|
| first_indexed | 2025-11-26T22:50:15Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118307 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T22:50:15Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Baranskii, P.I. Gaidar, G.P. 2017-05-29T16:43:47Z 2017-05-29T16:43:47Z 2012 Peculiarities of thermoannealing in n-Si and n-Ge crystals
 with oxygen impurity / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 218-222. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS 61.82.Fk https://nasplib.isofts.kiev.ua/handle/123456789/118307 . Investigated in this work were changes in the concentration of charge carriers
 ne and their mobilities u, which occur under the influence of thermoannealing of n - Si
 and n - Ge crystals grown by the Czochralski method. Thermoannealing of n - Si
 samples was carried out both at 450 °C and 650 °C. The results of the influence of twostage
 (combined) thermoannealing have been presented. In the first series of
 experiments, the annealing was performed at 450 °C with varied duration (from 5 to
 45 h) at the beginning, and then it was carried out for 40 hours at 650 °C. The second
 series of experiments was as follows: the annealing at 450 °C for 45-hour duration, then
 the annealing at 650 °C, which was carried out for various periods of time
 (5, 10, 20, 45, 66 hours). The observations for changes of ne and u were carried out both
 at the temperature 300 and 77 K. It is ascertained that changing the main parameters (ne
 and u) in n Ge As heavily doped single crystals, as a result of the series of
 thermoannealings (duration 30 min in each case) within the temperature range from 540
 to 900 °C, is non-monotonous due to transformation of the thermodonors TD - I into
 TD-II . en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity Article published earlier |
| spellingShingle | Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity Baranskii, P.I. Gaidar, G.P. |
| title | Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity |
| title_full | Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity |
| title_fullStr | Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity |
| title_full_unstemmed | Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity |
| title_short | Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity |
| title_sort | peculiarities of thermoannealing in n-si and n-ge crystals with oxygen impurity |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118307 |
| work_keys_str_mv | AT baranskiipi peculiaritiesofthermoannealinginnsiandngecrystalswithoxygenimpurity AT gaidargp peculiaritiesofthermoannealinginnsiandngecrystalswithoxygenimpurity |